IKN06N60RC2ATMA1 N-Channel MOSFET, 600V 6A, TO-252 Package, Power Transistor

  • Designed for efficient switching in power management circuits, supporting reduced energy loss during operation.
  • Features a TO-220 package, which allows for straightforward mounting and effective thermal management in assemblies.
  • Compact package helps minimize board space while enabling high-density power designs in modern electronics.
  • Ideal for use in power supplies and motor control systems, enhancing overall system efficiency and stability.
  • The IKN06N60RC2ATMA1 model is built for consistent, reliable performance in demanding industrial environments.
SKU: IKN06N60RC2ATMA1 Category: Brand:
Infineon logo
产品上方询盘

IKN06N60RC2ATMA1 Overview

The IKN06N60RC2ATMA1 is a high-performance N-channel power MOSFET designed for demanding industrial and power management applications. This device is engineered to deliver efficient switching, low on-resistance, and robust voltage handling, making it suitable for a broad range of power electronics systems. Its advanced silicon technology supports reliable operation in harsh environments, while the optimized package ensures ease of integration and thermal management. For procurement and additional technical resources, visit IC Manufacturer.

IKN06N60RC2ATMA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) 6 A
Maximum Gate-Source Voltage (VGS) ?I20 V
RDS(on) (Max) 0.75 ??
Power Dissipation 125 W
Package TO-220FP
Mounting Type Through Hole

IKN06N60RC2ATMA1 Key Features

  • High voltage rating up to 600 V allows safe operation in industrial power circuits, supporting robust energy management and isolation.
  • Low RDS(on) of 0.75 ?? reduces conduction losses, improving energy efficiency and minimizing heat generation during operation.
  • Capable of continuous drain current up to 6 A, enabling use in medium power applications where consistent current delivery is essential.
  • TO-220FP package offers enhanced thermal performance and secure mounting for reliable long-term use in power supplies and inverters.

IKN06N60RC2ATMA1 Advantages vs Typical Alternatives

This MOSFET stands out due to its combination of high voltage tolerance, low on-resistance, and robust current handling. Compared to typical alternatives, it offers improved reliability, better thermal efficiency, and a convenient package for easy integration into dense or high-power designs. These factors help engineers achieve higher performance and longer product life in industrial and commercial systems.

Typical Applications

  • Switch mode power supplies (SMPS): The device??s high voltage and current capabilities make it well-suited for use in the primary side switching of SMPS, ensuring efficient conversion and stable operation over a wide load range.
  • Motor control circuits: Its ability to manage substantial current and voltage enables reliable control of industrial motors and actuators, supporting precise speed and torque regulation.
  • Uninterruptible power supplies (UPS): The MOSFET??s robust performance characteristics allow it to handle the demanding switching requirements in backup and emergency power systems.
  • Inverter circuits: With its high voltage withstand and efficient switching, this device is ideal for use in solar inverters, variable frequency drives, and energy conversion systems.

IKN06N60RC2ATMA1 Brand Info

The IKN06N60RC2ATMA1 is produced by a leading semiconductor manufacturer recognized for reliability and innovation in the power electronics market. This component is part of a comprehensive MOSFET portfolio designed to meet the stringent demands of industrial applications. Its combination of high voltage capability, low on-resistance, and rugged package underscores the brand??s commitment to quality and performance, making it a preferred choice for engineers and procurement specialists seeking dependable power management solutions.

FAQ

What is the maximum voltage the device can handle between drain and source?

The maximum drain-source voltage rating is 600 V, allowing the device to be used safely in high-voltage applications such as industrial power supplies, inverters, and motor drives.

What package type does this MOSFET utilize and what are its advantages?

It is housed in a TO-220FP package, which features a fully isolated mounting tab for improved thermal performance and electrical isolation. This makes it ideal for through-hole PCB assembly in high-power designs.

How does the RDS(on) value benefit system efficiency?

The low RDS(on) of 0.75 ?? minimizes conduction losses, which reduces heat generation and improves overall system efficiency, especially in continuous load applications or during rapid switching.

📩 Contact Us

产品中间询盘

Can this component be used for both AC and DC switching?

Yes, the device??s high voltage tolerance and robust current handling make it suitable for both AC and DC switching tasks, including applications like SMPS, inverters, and motor controllers.

What is the maximum continuous drain current supported?

The device supports a continuous drain current of 6 A, providing ample headroom for medium to high power switching applications where consistent and reliable current delivery is required.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?