IKN04N60RC2ATMA1 N-Channel MOSFET, 600V 4A, TO-220 Package, Power Transistor

  • Designed for efficient power switching, this component enables fast and reliable control in electronic circuits.
  • Features a TO-220 package, providing a compact footprint and allowing for easier integration into limited PCB space.
  • Suitable for use in power supplies or motor control, helping to manage high voltages in industrial environments.
  • Model IKN04N60RC2ATMA1 supports high voltage operation, important for handling demanding power management tasks.
  • Manufactured with robust construction, ensuring consistent performance and durability under repeated operational stress.
SKU: IKN04N60RC2ATMA1 Category: Brand:
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产品上方询盘

IKN04N60RC2ATMA1 Overview

The IKN04N60RC2ATMA1 is a high-voltage N-channel MOSFET designed for demanding industrial and power management applications. With robust voltage handling and low on-resistance, this device efficiently manages power switching while minimizing losses. Its advanced silicon technology ensures reliable performance, making it ideal for use in switched-mode power supplies, motor drives, and high-efficiency converters. The component is optimized for designers seeking a combination of efficiency and ruggedness in harsh operating conditions. For more detailed product sourcing and manufacturer information, visit IC Manufacturer.

IKN04N60RC2ATMA1 Technical Specifications

Parameter Value
Type N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) 4 A
On-Resistance (RDS(on)) 1.6 ??
Gate Charge (Qg) ??
Package TO-220FP
Mounting Type Through Hole
Polarity N-Channel
Technology MOSFET

IKN04N60RC2ATMA1 Key Features

  • High voltage tolerance up to 600 V enables safe operation in industrial and energy applications, reducing risk of device failure.
  • Low on-resistance (1.6 ??) minimizes conduction losses, supporting higher system efficiency and lower thermal management requirements.
  • TO-220FP package offers enhanced isolation and thermal performance, simplifying heatsinking and PCB layout.
  • Through-hole mounting ensures robust mechanical fixation and facilitates easy replacement or prototyping in demanding environments.

IKN04N60RC2ATMA1 Advantages vs Typical Alternatives

The IKN04N60RC2ATMA1 stands out due to its combination of high voltage capability and low on-resistance, resulting in improved energy efficiency and reduced heat generation compared to standard MOSFETs. Its TO-220FP package further enhances electrical isolation and reliability, making it an optimal choice for applications requiring robust performance and ease of integration.

Typical Applications

  • Switched-mode power supplies: Ideal for primary-side switching and power conversion in high-voltage SMPS circuits, ensuring efficient energy transfer and reduced switching losses.
  • Motor drives: Suitable for motor control units in industrial automation, providing reliable high-voltage operation for inductive loads.
  • AC-DC converters: Used in conversion stages requiring robust handling of elevated voltages and efficient switching characteristics.
  • Power factor correction circuits: Supports active PFC designs by offering stable, low-loss switching in electrical power systems.

IKN04N60RC2ATMA1 Brand Info

IKN04N60RC2ATMA1 is manufactured by a recognized leader in discrete power semiconductors, ensuring adherence to stringent quality and reliability standards. This device is engineered to address the demands of modern industrial and energy systems, with a focus on safety, efficiency, and long-term durability. Its specification and packaging reflect the brand??s commitment to delivering high-performance solutions for B2B customers and engineering professionals.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

This device is rated for a maximum drain-source voltage of 600 V, making it suitable for use in high-voltage industrial and power conversion circuits where robust voltage handling is critical.

Which package type is the IKN04N60RC2ATMA1 supplied in?

The component is supplied in a TO-220FP package, which offers enhanced electrical isolation and efficient heat dissipation, facilitating straightforward integration into existing hardware layouts.

What are the main benefits of the low on-resistance specification?

Low on-resistance (1.6 ??) reduces conduction losses during operation, which translates to improved energy efficiency, lower heat generation, and less demanding thermal management requirements for system designers.

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产品中间询盘

Is this device suitable for through-hole mounting?

Yes, it is specifically designed for through-hole mounting, ensuring secure mechanical connection and ease of installation or replacement in industrial and prototyping applications.

In which types of applications is this MOSFET typically used?

This device is commonly used in switched-mode power supplies, motor drives, AC-DC converters, and power factor correction circuits, benefiting designs that require high-voltage handling, reliability, and efficient switching performance.

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