IKN01N60RC2ATMA1 Overview
The IKN01N60RC2ATMA1 is a high-performance N-channel MOSFET designed for industrial and power management applications. With a robust design and advanced silicon technology, this device excels in applications requiring high voltage handling, efficient switching, and reliable operation. Its compact SOT-223-3 package enables ease of integration into modern PCB layouts, offering engineers a balance of electrical performance and thermal management. The IKN01N60RC2ATMA1 is well-suited for demanding environments, supporting efficient energy conversion and robust circuit protection. For more information, visit IC Manufacturer.
IKN01N60RC2ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 0.85 A |
| RDS(on) (Max) | 6 ?? |
| Gate Threshold Voltage (VGS(th)) | 2 V ÿ 4 V |
| Package / Case | SOT-223-3 |
| Polarity | N-Channel |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IKN01N60RC2ATMA1 Key Features
- High voltage capability up to 600 V, enabling safe operation in applications demanding robust isolation and margin against voltage spikes.
- Low gate threshold voltage (2 Vÿ4 V) allows compatibility with low-voltage logic circuits, helping to reduce overall system power consumption.
- Compact SOT-223-3 surface-mount package streamlines PCB design and improves thermal dissipation, supporting higher reliability in dense assemblies.
- RoHS compliance ensures suitability for environmentally conscious projects and international markets.
IKN01N60RC2ATMA1 Advantages vs Typical Alternatives
This MOSFET offers a valuable combination of high voltage tolerance, compact package, and efficient switching performance. Compared to standard alternatives, its low RDS(on) reduces conduction losses, while surface-mount design simplifies assembly and supports higher-density layouts. Its RoHS compliance also aligns with global regulatory standards, enhancing sourcing confidence and long-term availability.
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Typical Applications
- Switch mode power supplies (SMPS): The device??s high voltage rating and efficient switching characteristics make it ideal for primary side switching and energy conversion in compact SMPS designs.
- Motor drivers: Suitable for low to medium power motor control, leveraging its fast switching and robust voltage handling.
- LED lighting circuits: Enables reliable current switching and energy efficiency in general and industrial LED driver applications.
- Battery management systems: Supports protection and switching functions in energy storage and battery-powered industrial equipment.
IKN01N60RC2ATMA1 Brand Info
The IKN01N60RC2ATMA1 is part of a trusted portfolio of discrete power semiconductors, engineered for demanding industrial and commercial environments. Its design reflects a commitment to quality, performance, and compliance, making it a reliable choice for engineers seeking consistent results across multiple applications. The device??s robust characteristics and wide voltage range stand out for projects requiring longevity and dependable operation under challenging electrical conditions.
FAQ
What is the maximum voltage the IKN01N60RC2ATMA1 can handle?
This MOSFET supports a maximum drain-source voltage of 600 V, making it suitable for circuits that demand robust high-voltage operation and resilience against voltage transients.
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What package type does the IKN01N60RC2ATMA1 use?
The device is housed in a SOT-223-3 surface-mount package. This compact form factor is ideal for high-density PCB layouts and offers good thermal dissipation characteristics for power management designs.
Is the IKN01N60RC2ATMA1 compliant with RoHS standards?
Yes, this product meets RoHS compliance requirements, ensuring it is free from hazardous substances and suitable for use in regulated and environmentally sensitive markets worldwide.
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What are typical use cases for this MOSFET?
Common applications include switch mode power supplies, industrial motor drivers, LED lighting control circuits, and battery management systems, thanks to its high voltage capacity and efficient switching characteristics.
How does the device support efficient power switching?
With a low RDS(on) value and a low gate threshold voltage, the MOSFET minimizes conduction and switching losses. This combination enhances energy efficiency and supports lower heat generation in demanding applications.
