IKD10N60RC2ATMA1 Overview
The IKD10N60RC2ATMA1 is a high-performance N-channel MOSFET engineered for demanding industrial and power electronics applications. This device combines robust voltage handling with efficient switching, making it suitable for use in power management, motor drives, and converter circuits. With its optimized silicon design, it offers low on-resistance and strong thermal stability, ensuring reliable operation even in challenging conditions. The compact package and advanced process technology support high integration levels, reducing overall system footprint. For more details, visit IC Manufacturer.
IKD10N60RC2ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Product Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 10 A |
| RDS(on) (Max) | 0.68 ?? |
| Gate Charge (Qg) | 63 nC |
| Package / Case | TO-220 |
| Operating Temperature Range | -55??C to +150??C |
| Mounting Type | Through Hole |
IKD10N60RC2ATMA1 Key Features
- High voltage tolerance up to 600 V, enabling safe operation in industrial power systems and motor drives.
- Low on-resistance of 0.68 ?? (max) reduces conduction losses, which increases overall system efficiency and lowers heat generation.
- Robust continuous drain current rating of 10 A supports demanding load conditions and enhances reliability in high-power circuits.
- Advanced TO-220 package ensures efficient heat dissipation and easy integration into standard PCB layouts.
- Wide operating temperature range from -55??C to +150??C allows reliable performance in harsh environments.
- Optimized gate charge (Qg) of 63 nC supports fast switching and minimizes switching losses in high-frequency applications.
IKD10N60RC2ATMA1 Advantages vs Typical Alternatives
Compared to conventional MOSFETs, this device offers a balanced combination of high voltage capability, low on-resistance, and robust current handling. These attributes translate to greater energy efficiency, improved thermal management, and more reliable operation in power-critical systems. The TO-220 package further simplifies integration and enhances mechanical durability, making it a preferred choice for industrial electronics.
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Typical Applications
- Switch-mode power supplies (SMPS): The 600 V voltage rating and efficient switching characteristics make it ideal for primary-side switches in SMPS designs, where reliability and efficiency are crucial.
- Motor drives: Suitable for industrial and automation motor drive circuits where consistent current handling and fast response are required.
- DC-DC converters: Used in high-voltage DC-DC converter topologies to improve efficiency and support higher load currents.
- Uninterruptible power supplies (UPS): Provides reliable switching and protection functions in UPS systems, helping maintain continuous operation during power disturbances.
IKD10N60RC2ATMA1 Brand Info
The IKD10N60RC2ATMA1 belongs to a trusted portfolio of power MOSFETs designed for industrial-grade performance and longevity. Manufactured using advanced semiconductor processes, this device is tailored for applications requiring high voltage endurance and efficient energy conversion. Its inclusion in the TO-220 package reflects a focus on both electrical and mechanical robustness, ensuring ease of use for engineers building next-generation power management solutions.
FAQ
What is the maximum voltage the IKD10N60RC2ATMA1 can handle?
This device is rated for a maximum drain-source voltage of 600 V, making it suitable for high-voltage switching applications commonly found in industrial and power electronics sectors.
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Which package type does this MOSFET utilize?
The component is offered in a TO-220 package, which is popular for its effective heat dissipation, straightforward mounting, and compatibility with standard through-hole PCB layouts in power supply designs.
What is the continuous drain current rating?
The IKD10N60RC2ATMA1 supports a continuous drain current of 10 A, allowing it to handle substantial loads in demanding applications such as motor drives and power converters.
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How does the low on-resistance benefit my design?
A low on-resistance (RDS(on)) of 0.68 ?? helps reduce conduction losses, resulting in greater energy efficiency, less heat generation, and improved overall system performance, especially in power conversion circuits.
Is this MOSFET suitable for use in harsh environments?
With an operating temperature range from -55??C to +150??C, this device is designed to perform reliably in both standard and challenging industrial environments, supporting extended operational lifetimes in a variety of applications.
