IKD06N60RFATMA1 N-Channel MOSFET Transistor, 600V, TO-220 Package

  • Serves as a power transistor, enabling efficient switching and control in electronic circuits.
  • Features a TO-263 package, which supports heat dissipation and straightforward mounting on PCBs.
  • Compact package design helps save board space and allows for higher density layouts in power supplies.
  • Ideal for use in motor drivers, providing reliable performance in demanding industrial or automotive environments.
  • Manufactured to ensure consistent operation and durability in long-term electronic applications for the IKD06N60RFATMA1 model.
SKU: IKD06N60RFATMA1 Category: Brand:
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产品上方询盘

IKD06N60RFATMA1 Overview

The IKD06N60RFATMA1 is a high-performance discrete IGBT designed for industrial and power electronics applications requiring robust efficiency, fast switching, and reliable operation. Engineered to provide low conduction and switching losses, this device delivers optimized energy control in demanding environments. Its configuration supports high-voltage handling while maintaining thermal stability and durability, making it suitable for use in motor drives, inverters, power supplies, and other critical systems. For further details and sourcing, visit IC Manufacturer.

IKD06N60RFATMA1 Technical Specifications

Parameter Value
Product Type Discrete IGBT (Insulated Gate Bipolar Transistor)
Collector-Emitter Voltage (VCES) 600 V
Continuous Collector Current (IC) 12 A
Gate-Emitter Voltage (VGE) ?I20 V
Collector Power Dissipation (PC) 52 W
Maximum Junction Temperature (TJ) 175 ??C
Package / Case TO-220FP
Configuration Single IGBT with Free Wheeling Diode
Mounting Type Through Hole

IKD06N60RFATMA1 Key Features

  • High Voltage Capability: With a collector-emitter voltage rating of 600 V, this device enables robust handling of industrial-level voltages, reducing risk of failure in high-powered applications.
  • Integrated Free Wheeling Diode: The inclusion of a free wheeling diode supports efficient energy recirculation and enhances protection in inductive load switching scenarios.
  • Low Conduction and Switching Losses: Optimized for thermal performance, it ensures high efficiency and stable operation even under demanding load cycles.
  • Thermal Stability: Rated for operation up to 175 ??C junction temperature, ensuring reliability in harsh environments.
  • Standard TO-220FP Package: This familiar and widely adopted package format simplifies design-in and replacement in existing systems.

IKD06N60RFATMA1 Advantages vs Typical Alternatives

Compared to standard IGBT solutions, this device offers enhanced voltage rating and integrated diode functionality, which together provide greater design flexibility and system-level efficiency. Its ability to operate at higher junction temperatures ensures stable performance in thermally demanding conditions. The device??s optimized switching characteristics also help reduce power losses, which is critical for industrial and automotive applications where energy efficiency and reliability are paramount.

Typical Applications

  • Motor Drives: Well-suited for use in frequency-controlled industrial motors, this IGBT ensures efficient energy conversion and reliable operation even in high-duty cycle environments.
  • Power Inverters: Supports rapid and efficient power switching in inverter circuits, helping to improve overall system efficiency and reduce total harmonic distortion.
  • Switch Mode Power Supplies (SMPS): Provides robust switching capability and durability in power supply circuits, contributing to compact and thermally stable designs.
  • Uninterruptible Power Supplies (UPS): Delivers dependable switching and energy management in backup power systems, enhancing reliability during voltage fluctuations.

IKD06N60RFATMA1 Brand Info

The IKD06N60RFATMA1 is developed by a leading manufacturer renowned for high-quality power semiconductor solutions. This IGBT is engineered to meet stringent industrial standards, providing users with reliable, high-voltage switching capability and integrated protection features. Its robust design and versatile package make it a preferred choice for engineers seeking proven performance in demanding industrial and power electronics applications.

FAQ

What type of device is the IKD06N60RFATMA1?

It is a discrete Insulated Gate Bipolar Transistor (IGBT) featuring a single transistor configuration with an integrated free wheeling diode, suitable for switching and amplification in high-power industrial circuits.

What package type does this IGBT use?

This model comes in a TO-220FP package, which is highly regarded for its ease of mounting and effective thermal management in through-hole PCB assembly.

Can the device handle high temperatures and voltages?

Yes, it can operate at junction temperatures up to 175 ??C and withstands collector-emitter voltages up to 600 V, making it ideal for harsh and high-voltage environments.

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产品中间询盘

Is the IKD06N60RFATMA1 suitable for switching inductive loads?

Absolutely. The integrated free wheeling diode makes it particularly effective for switching inductive loads such as motors, as it facilitates energy recirculation and protects against voltage spikes.

What are the main application areas for this device?

It is widely used in motor drives, power inverters, switch mode power supplies, and uninterruptible power systems, all of which benefit from its efficient switching and robust construction.

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