IKB40N65EH5ATMA1 Power MOSFET Transistor, TO-247 Package, 650V 40A

  • Enables efficient switching and power management in electronic circuits for reduced energy loss.
  • Features a TO-247-3 package, offering straightforward through-hole mounting and enhanced heat dissipation.
  • Compact packaging conserves valuable board space, supporting higher power densities in constrained designs.
  • Ideal for use in high-voltage power supplies, improving overall system performance and reliability.
  • Manufactured with consistent process controls to help ensure stable operation over extended periods.
SKU: IKB40N65EH5ATMA1 Category: Brand:
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IKB40N65EH5ATMA1 Overview

The IKB40N65EH5ATMA1 is a high-voltage N-channel power MOSFET tailored for demanding industrial and commercial applications. Designed for efficient power switching, it provides robust performance, low losses, and reliable operation in environments where high efficiency and reliability are crucial. With its advanced trench technology and optimized silicon structure, this device is well-suited for use in power supplies, motor drives, and energy conversion systems. Engineers and sourcing specialists seeking a proven solution for high-voltage switching will find this component a dependable choice. Learn more at IC Manufacturer.

IKB40N65EH5ATMA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 650 V
Continuous Drain Current (ID) 40 A
Technology Trench Field Stop
Package Type TO-247-3
Polarity N-Channel
Configuration Single
Mounting Style Through Hole
Product Category Transistors – FETs, MOSFETs – Single

IKB40N65EH5ATMA1 Key Features

  • High Drain-Source Voltage: Supports up to 650 V, enabling safe operation in high-voltage circuits and extending compatibility with a wide range of industrial applications.
  • Large Continuous Drain Current Rating: Handles up to 40 A, making it suitable for power-intensive environments where current handling and thermal reliability are essential.
  • Advanced Trench Field Stop Technology: Delivers reduced conduction and switching losses, which translates to improved energy efficiency and lower heat generation during operation.
  • Robust TO-247-3 Package: Ensures durability and effective heat dissipation, simplifying thermal management and enhancing device longevity in demanding environments.

IKB40N65EH5ATMA1 Advantages vs Typical Alternatives

Compared to typical alternatives, this power MOSFET offers a compelling mix of high voltage tolerance, substantial current capability, and lower switching losses. The integrated trench technology and robust packaging contribute to increased efficiency, greater thermal stability, and enhanced operational reliability??especially important in industrial power supply and switching applications. Superior integration and reduced losses make it a preferred solution for engineers seeking consistent performance.

Typical Applications

  • Switched-Mode Power Supplies (SMPS): With its 650 V voltage rating and high current capacity, it is ideal for use in industrial and server power supply units, where efficiency and ruggedness are vital for stable operation.
  • Motor Drive Circuits: The device??s high efficiency and thermal robustness help support variable frequency drives and servo systems in automation and robotics.
  • Uninterruptible Power Supplies (UPS): Enables reliable high-voltage switching for backup systems, ensuring clean and consistent power delivery during outages or instability.
  • Renewable Energy Inverters: Supports solar or wind inverter designs, providing efficient DC-AC conversion with reliable high-voltage switching performance.

IKB40N65EH5ATMA1 Brand Info

The IKB40N65EH5ATMA1 represents advanced semiconductor engineering in the realm of high-voltage N-channel MOSFETs. Manufactured to meet rigorous industrial standards, this device leverages trench field stop technology for improved power efficiency and thermal management. Its TO-247-3 package supports straightforward integration into power modules and assemblies, making it a go-to solution for engineers in energy conversion, automation, and high-power switching systems. The product reflects a commitment to reliability, efficiency, and performance in demanding environments.

FAQ

What is the maximum voltage the IKB40N65EH5ATMA1 can handle?

This device supports a drain-source voltage of up to 650 V, making it suitable for a variety of high-voltage switching applications in industrial environments.

Which package type is used, and how does it benefit thermal management?

The device is housed in a TO-247-3 package, which offers excellent heat dissipation characteristics and simplifies mounting for through-hole PCB assemblies or heatsink integration.

Is this MOSFET appropriate for high-current applications?

Yes, with a continuous drain current rating of 40 A, it is well-suited for high-current scenarios such as motor drives, power supplies, and inverter circuits.

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产品中间询盘

What technology underpins the efficiency of this part?

The MOSFET utilizes advanced trench field stop technology, which delivers lower conduction and switching losses for improved system efficiency and operational reliability.

Can this device be used in both industrial and renewable energy applications?

Absolutely. Its high-voltage and high-current ratings, along with robust packaging, make it suitable for industrial power supplies, motor control, as well as renewable energy inverter applications.

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