IHW50N65R6XKSA1 Power MOSFET Transistor, TO-247 Package, High-Efficiency Switch

IHW50N65R6XKSA1 Overview

The IHW50N65R6XKSA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for demanding industrial and power electronics applications. With a voltage rating of 650V and a current capability of 50A, this device delivers efficient switching, low conduction losses, and robust operation. Its TO-247 package ensures effective thermal management, making it suitable for power conversion, motor drives, and inverter solutions. The component??s optimized design enables engineers and sourcing specialists to achieve higher reliability and system efficiency in their projects. For further details, visit IC Manufacturer.

IHW50N65R6XKSA1 Technical Specifications

IHW50N65R6XKSA1 Key Features

• High voltage tolerance: The 650V rating enables use in medium- to high-voltage power conversion systems, enhancing design flexibility.
• Robust current capability: With a maximum collector current of 50A, it supports high-power applications, reducing the need for parallel devices.
• Efficient thermal performance: The TO-247 package optimizes heat dissipation, enabling reliable operation at elevated power levels.
• Trench Field Stop technology: Delivers lower switching and conduction losses, which improves overall system efficiency and reduces thermal stress.

IHW50N65R6XKSA1 Advantages vs Typical Alternatives

This IGBT stands out from typical alternatives by combining a high voltage rating, robust current handling, and advanced Trench Field Stop technology. The result is reduced switching and conduction losses, improved thermal performance, and higher reliability for demanding industrial environments. Its efficient design with a TO-247 package ensures ease of integration and long-term operational stability for engineers.

Typical Applications

• Industrial motor drives: The high voltage and current capabilities make it ideal for variable frequency drives and servo motor controls, supporting energy-efficient operation and precise speed regulation in industrial automation.
• Power inverters: Suitable for solar inverters, UPS systems, and renewable energy conversion, where efficient DC-AC conversion and robust performance are required.
• Welding equipment: Its rugged design and high current rating enable reliable switching in industrial welding machines and plasma cutters.
• Uninterruptible power supplies: Used for reliable backup power systems, ensuring stable operation during power interruptions and protecting sensitive equipment.

IHW50N65R6XKSA1 Brand Info

The IHW50N65R6XKSA1 is part of a reputable portfolio of industrial-grade power semiconductors. It is engineered to meet stringent requirements for efficiency, reliability, and robustness in high-power applications. The device??s integration of Trench Field Stop technology reflects a commitment to innovation and performance, making it a preferred choice for engineers and sourcing professionals seeking dependable IGBT solutions for demanding environments.

FAQ

What is the primary advantage of the IHW50N65R6XKSA1??s Trench Field Stop technology?

Trench Field Stop technology allows for lower switching and conduction losses, which translates to higher efficiency and reduced heat generation. This results in better energy savings and more reliable operation, especially in continuous-duty industrial applications.

Can the IHW50N65R6XKSA1 be used in renewable energy systems?

Yes, this IGBT is well-suited for renewable energy applications such as solar and wind inverters, where high voltage tolerance and efficient power conversion are critical for maximizing system output and reliability.

What package type is used, and why is it important?

The device features a TO-247 package, which provides excellent thermal performance and allows for effective heat dissipation. This is important for maintaining stable operation at high current levels and extending device lifespan.

Is the IHW50N65R6XKSA1 suitable for high-frequency switching?

Due to its advanced design and low switching losses, the component performs well in high-frequency switching scenarios, supporting applications that demand fast, efficient transitions while minimizing power loss and heat generation.

What mounting method does the device use?

This IGBT uses through-hole mounting, which offers strong mechanical stability and is preferred in applications where high reliability and robust physical connections are required, such as industrial power modules and heavy-duty electronics.