IHW30N120R5XKSA1 IGBT Transistor, 1200V 30A, TO-247 Package

  • Designed as an Insulated Gate Bipolar Transistor (IGBT), supporting efficient switching in high-power circuits.
  • Features a TO-247 package, offering ease of mounting and improved thermal management in dense designs.
  • Compact package form factor helps reduce board space requirements in power electronic assemblies.
  • Ideal for use in industrial motor drives, enabling precise control and energy savings during operation.
  • Manufactured for consistent performance, supporting stable operation and long-term device reliability.
SKU: IHW30N120R5XKSA1 Category: Brand:
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IHW30N120R5XKSA1 Overview

The IHW30N120R5XKSA1 is a high-performance insulated-gate bipolar transistor (IGBT) designed to deliver efficient switching and robust power handling for demanding industrial and automotive applications. Featuring a 1200V voltage rating and 30A continuous current capability, this device offers low switching losses and high reliability in a compact TO-247-3 package. Its optimized silicon technology supports fast switching frequencies, making it suitable for inverters, motor drives, and power management systems. For engineers and sourcing specialists seeking consistent performance and longevity, the IHW30N120R5XKSA1 provides a cost-effective solution for power conversion needs. Learn more at IC Manufacturer.

IHW30N120R5XKSA1 Technical Specifications

Parameter Value
Device Type Insulated-Gate Bipolar Transistor (IGBT)
Collector-Emitter Voltage (VCES) 1200 V
Collector Current (IC) 30 A
Configuration Single IGBT
Package / Case TO-247-3
Mounting Style Through Hole
Polarity N-Channel
Product Category IGBTs Single Transistor

IHW30N120R5XKSA1 Key Features

  • High Voltage Tolerance: 1200V maximum collector-emitter voltage ensures safe operation in high-voltage environments, reducing risk of breakdown.
  • Substantial Current Handling: 30A continuous collector current supports medium-to-high power loads, offering flexibility for a range of industrial uses.
  • Efficient Switching: Optimized for low switching losses, which enhances overall system efficiency and reduces thermal management demands.
  • TO-247-3 Package: Well-established, thermally robust through-hole package simplifies integration into existing designs and supports effective heat dissipation.
  • N-Channel Structure: Delivers fast switching response and supports higher frequency operation, benefitting dynamic load conditions.
  • Reliable Performance: Designed for long-term operational stability, making it suitable for mission-critical and continuous-use scenarios.

IHW30N120R5XKSA1 Advantages vs Typical Alternatives

Compared to standard IGBTs and similar switching devices, this component offers a combination of high voltage endurance, significant current capability, and reduced switching losses. Its robust TO-247-3 package further enhances reliability and ease of thermal management. These attributes make it a superior choice for power-intensive environments, where efficiency, operational stability, and integration flexibility are essential.

Typical Applications

  • Industrial Motor Drives: Used in variable frequency drives and servo drives, ensuring efficient control of AC motors in automation, manufacturing, and process industries. Its electrical characteristics support precise speed and torque regulation.
  • Power Inverters: Ideal for DC-AC conversion in renewable energy systems and uninterruptible power supplies, offering high efficiency and robust voltage handling.
  • Welding Equipment: Suited for high-frequency switching in welding power sources, providing reliable energy delivery and extended operational life.
  • Uninterruptible Power Supplies (UPS): Supports fast switching and high-load conditions, ensuring consistent backup power delivery in critical infrastructure applications.

IHW30N120R5XKSA1 Brand Info

The IHW30N120R5XKSA1 is developed using advanced semiconductor processes to meet the rigorous demands of industrial and automotive sectors. Manufactured by a globally recognized leader in power electronics, this product reflects a commitment to quality, innovation, and long-term support. Its design integrates decades of expertise in IGBT fabrication, ensuring not only compliance with industry standards but also enhanced performance across a broad range of power conversion and control applications.

FAQ

What is the primary advantage of using this IGBT in industrial motor drives?

The device??s high voltage and current ratings, combined with efficient switching performance, make it particularly suitable for industrial motor drives. It enables precise control of motor speed and torque while maintaining energy efficiency and system reliability, even in demanding automation environments.

How does the TO-247-3 package benefit thermal management?

The TO-247-3 package is engineered for effective heat dissipation, thanks to its large surface area and robust construction. This simplifies the design of thermal management solutions, allowing for reliable operation under continuous or high-load conditions without excessive temperature rise.

Can this device operate at high switching frequencies?

Yes, the device is optimized for fast switching, supporting applications that require high-frequency operation. This capability is essential for modern power inverters, welding equipment, and other systems where rapid response times and energy efficiency are critical.

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Is it suitable for automotive power applications?

With its strong voltage endurance and current handling, this IGBT is well-suited for automotive power modules, electric vehicle inverters, and auxiliary power supplies. Its reliability and efficiency contribute to long service life and stable performance in vehicle environments.

What are the integration benefits for power control systems?

The single-transistor configuration and industry-standard through-hole package facilitate straightforward integration into new or existing power control systems. This reduces development time, simplifies PCB layout, and ensures compatibility with established thermal and mechanical infrastructures.

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