IGT65R025D2ATMA1 Overview
The IGT65R025D2ATMA1 is a high-performance, industrial-grade IGBT (Insulated Gate Bipolar Transistor) designed for demanding power conversion and switching applications. Offering robust energy efficiency and low conduction losses, this device is tailored for engineers seeking reliable and scalable solutions in motor drives, inverters, and power supply systems. With its advanced silicon technology and optimized thermal management, the IGT65R025D2ATMA1 delivers precise control and operational stability even in harsh industrial environments. For sourcing and integration support, visit IC Manufacturer.
IGT65R025D2ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | IGBT (Insulated Gate Bipolar Transistor) |
| Collector-Emitter Voltage (VCES) | 650 V |
| Collector Current (IC) | 75 A |
| VCE(sat) (Saturation Voltage) | 2.05 V |
| Maximum Power Dissipation | 417 W |
| Gate Charge | 220 nC |
| Package Type | TO-247-3 |
| Operating Temperature Range | -40??C to +150??C |
| Technology | Trench Field Stop |
IGT65R025D2ATMA1 Key Features
- 650 V high-voltage capability enables reliable operation in industrial power circuits, ensuring safety margins and system robustness.
- Low VCE(sat) of 2.05 V minimizes conduction losses, leading to reduced heat generation and improved energy efficiency.
- Large collector current rating (75 A) provides high current handling for heavy loads, supporting demanding applications like motor drives and inverters.
- Advanced Trench Field Stop technology offers optimized switching performance and reduced switching losses, enhancing overall system efficiency.
- TO-247-3 package delivers superior thermal performance and ease of mounting in power modules or heatsink assemblies.
- Wide operating temperature range (-40??C to +150??C) supports deployment in harsh industrial and outdoor environments.
- High power dissipation capability (417 W) enables integration in high-density power systems without compromising reliability.
IGT65R025D2ATMA1 Advantages vs Typical Alternatives
This IGBT stands out compared to typical alternatives due to its combination of low conduction and switching losses, robust current capability, and advanced Trench Field Stop technology. These attributes provide greater efficiency, improved thermal management, and enhanced operational reliability for industrial power applications. Additionally, the device??s broad temperature tolerance and high-voltage rating ensure long-term stability in demanding environments, giving engineers a dependable solution for critical designs.
🔥 Best-Selling Products

Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package

Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring

Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package

Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Industrial motor drives: The device??s high current and voltage ratings make it ideal for use in AC and DC motor control systems, where reliability and efficiency are paramount.
- Power inverters: Suitable for solar, UPS, and industrial inverter systems that require robust switching and low energy losses.
- Switch-mode power supplies (SMPS): Can be used in high-power SMPS designs demanding stable performance and minimized heat generation.
- Welding equipment: Handles the rapid switching and high loads typical in industrial welding applications, ensuring consistent power delivery.
IGT65R025D2ATMA1 Brand Info
The IGT65R025D2ATMA1 represents a commitment to advanced power semiconductor design, integrating Trench Field Stop technology for superior efficiency and performance. This device is manufactured to stringent industry standards, ensuring high reliability and consistency across production batches. Its TO-247-3 package and carefully engineered specifications position it as a preferred solution for engineers developing next-generation industrial power management systems. The device??s blend of high voltage, current capability, and thermal performance makes it a strategic choice for applications where performance and reliability cannot be compromised.
FAQ
What is the primary benefit of using the IGT65R025D2ATMA1 in industrial motor drives?
The main advantage lies in its high collector current rating and low saturation voltage, which together enable efficient operation under heavy load conditions. This results in reduced energy losses and excellent system reliability for demanding industrial motor drive applications.
🌟 Featured Products

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does Trench Field Stop technology improve IGBT performance?
This advanced technology reduces both conduction and switching losses, contributing to higher efficiency and lower heat generation. It also allows for faster switching speeds, making the device suitable for high-frequency power conversion systems.
What thermal management considerations are needed for the TO-247-3 package?
The TO-247-3 package offers robust heat dissipation, but proper heatsinking is still essential to maintain safe junction temperatures under continuous high-current conditions. Ensuring good thermal contact and airflow will maximize device reliability and lifespan.
📩 Contact Us
Can this IGBT be used in outdoor or harsh industrial environments?
Yes, its wide operating temperature range from -40??C to +150??C makes it well-suited for deployment in environments where temperature extremes and fluctuating operating conditions are expected, such as outdoor installations or heavy industrial settings.
What are the key factors to consider when integrating this device into a new design?
Engineers should consider voltage and current ratings in relation to load requirements, appropriate gate drive circuitry to handle the device??s gate charge, and adequate thermal management to leverage the full power dissipation capabilities for reliable operation.






