IGQ100N120S7XKSA1 Overview
The IGQ100N120S7XKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) optimized for demanding industrial and power conversion applications. Designed for efficient switching and robust reliability, this discrete semiconductor device is housed in a versatile TO-247-3 package, making it well-suited for high voltage and high current environments. With its advanced construction and proven technology, the device delivers consistent performance, excellent thermal management, and straightforward integration into power electronics systems. For more details, visit the IC Manufacturer.
IGQ100N120S7XKSA1 Technical Specifications
| Attribute | Value |
|---|---|
| Product Category | IGBT Transistors |
| Current – Collector (Ic) (Max) | 180A |
| Voltage – Collector Emitter Breakdown (V(BR)CEO) | 1200V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
| Input Capacitance (Cies) @ Vce | 7.1nF @ 25V |
| Power – Max | 625W |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175??C |
| Configuration | Single |
IGQ100N120S7XKSA1 Key Features
- High collector current capability (180A) enables support for applications requiring substantial load handling, improving system throughput and flexibility.
- With a 1200V collector-emitter breakdown voltage, the device provides robust voltage withstand for industrial-grade power conversion and motor control systems.
- Low Vce(on) value (1.7V at 100A) minimizes conduction losses, resulting in increased energy efficiency and reduced heat generation in power electronics designs.
- TO-247-3 package with through-hole mounting supports secure and durable placement on PCBs, facilitating better thermal management and mechanical reliability.
- High maximum operating temperature (175??C) enables deployment in harsh and demanding industrial environments without compromising device integrity.
IGQ100N120S7XKSA1 Advantages vs Typical Alternatives
This IGBT stands out due to its high current (180A) and voltage (1200V) ratings, making it ideal for applications demanding both power density and reliability. The low Vce(on) ensures reduced conduction losses, supporting greater energy efficiency and thermal performance compared to typical alternatives. Its robust TO-247-3 package and wide operating temperature range further reinforce its suitability for critical, high-stress environments.
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Typical Applications
- Industrial motor drives: The device’s high current and voltage ratings make it highly suitable for variable frequency drives and servo amplifiers where efficient switching and reliability are critical for motors in automation, robotics, and process control.
- Uninterruptible Power Supplies (UPS): Its robust switching characteristics support efficient power conversion and battery backup systems, ensuring stable output during power interruptions.
- Renewable energy inverters: This IGBT can be utilized in solar and wind power inverters to convert DC to AC efficiently, supporting grid-tied and off-grid energy storage solutions.
- Welding equipment: High peak current capability and efficient power handling make it a strong fit for industrial welding machines and plasma cutters requiring stable and reliable switching devices.
IGQ100N120S7XKSA1 Brand Info
The IGQ100N120S7XKSA1 is manufactured with attention to quality and consistency, reflecting the brand’s commitment to providing robust, high-performance semiconductor components. This product is tailored for demanding industrial, energy, and automation markets, offering reliable operation and ease of integration. Its design and specification profile are crafted to meet the requirements of engineers seeking proven solutions for high power and efficiency in modern electronic systems.
FAQ
What is the maximum collector current supported by the IGQ100N120S7XKSA1?
This device supports a maximum collector current of 180A, making it suitable for high-current industrial applications such as motor drives, power inverters, and heavy-duty switching systems.
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What voltage can the collector-emitter withstand in this IGBT?
The maximum collector-emitter breakdown voltage is 1200V, ensuring reliable operation in high-voltage circuits and industrial environments requiring robust isolation and switching capabilities.
How does the low Vce(on) value benefit my application?
A low Vce(on) of 1.7V at 100A reduces conduction losses, which in turn minimizes heat generation and improves overall energy efficiency. This is especially valuable in continuous operation environments.
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What are the mounting and packaging details for this IGBT?
The device is offered in a TO-247-3 through-hole package, which provides secure PCB mounting and excellent thermal performance, making it suitable for applications requiring efficient heat dissipation.
Can this device operate in high-temperature environments?
Yes, it is rated for operation up to 175??C, allowing it to perform reliably in harsh industrial and outdoor environments where elevated temperatures are common.
