IGD06N60TATMA1 N-Channel MOSFET 600V 6A TO-252 Surface Mount Transistor

  • Designed for efficient power switching, this component helps reduce energy loss in electronic circuits.
  • Features a TO-220 package, enabling easy mounting and effective heat dissipation in compact designs.
  • Its size and packaging allow for space-saving layouts on printed circuit boards, ideal for dense assemblies.
  • Commonly used in power supplies, it ensures stable voltage regulation for sensitive electronic devices.
  • The IGD06N60TATMA1 is built for consistent performance under demanding operating conditions.
SKU: IGD06N60TATMA1 Category: Brand:
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产品上方询盘

IGD06N60TATMA1 Overview

The IGD06N60TATMA1 is a high-voltage N-channel MOSFET tailored for demanding power management and switching applications. Its advanced silicon technology delivers excellent performance in efficiency, reliability, and robust voltage handling. Featuring a compact TO-263-3 package, this device is optimized for modern industrial and commercial designs where thermal management and space are at a premium. The combination of low on-resistance and high avalanche energy capability makes it a preferred choice for engineers seeking dependable operation in motor control, power supplies, and inverter systems. For additional sourcing and technical support, visit the IC Manufacturer.

IGD06N60TATMA1 Technical Specifications

Parameter Value
Product Type N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) 6 A
On-Resistance (RDS(on)) 0.68 ??
Gate Threshold Voltage (VGS(th)) 3 V
Package / Case TO-263-3
Polarity N-Channel
Mounting Type Surface Mount
Operating Temperature Range -55??C to 150??C

IGD06N60TATMA1 Key Features

  • 600 V drain-source voltage enables robust operation in high-voltage circuits, improving system safety and design flexibility.
  • Low on-resistance of 0.68 ?? reduces conduction losses, enhancing efficiency and minimizing heat generation in power conversion applications.
  • TO-263-3 package provides excellent thermal performance and supports automated surface-mount assembly for streamlined production.
  • Wide operating temperature range from -55??C to 150??C ensures reliable performance in harsh industrial environments.

IGD06N60TATMA1 Advantages vs Typical Alternatives

This N-channel MOSFET offers competitive low on-resistance, which translates to reduced power loss and improved overall efficiency when compared with standard alternatives. The high drain-source voltage rating and robust thermal package increase reliability in demanding applications. Its optimized electrical characteristics support seamless integration in modern power management designs, providing a balance of performance and durability for engineers and system architects.

Typical Applications

  • Switch mode power supplies: The device’s high voltage capability and low conduction losses make it ideal for primary and secondary side switching elements in SMPS topologies, supporting efficient energy conversion.
  • Motor drives: Suitable for use in industrial and commercial motor control circuits, where fast switching and low RDS(on) help minimize losses.
  • Inverter circuits: Reliable operation at high voltage and current ratings enables use in solar inverters, UPS, and variable frequency drives.
  • General-purpose power switching: Its versatility makes it a solid choice for relay replacements, load switches, and other electronic switching applications requiring robust performance.

IGD06N60TATMA1 Brand Info

IGD06N60TATMA1 is part of a reputable semiconductor manufacturer’s portfolio, focusing on high-voltage discrete power components. This product combines proven MOSFET technology with a rugged TO-263-3 package to deliver consistent performance in industrial and power management systems. The part is engineered to meet stringent quality and reliability requirements, making it a dependable solution for engineers and procurement professionals seeking long-term supply assurance and technical support.

FAQ

What is the maximum drain-source voltage supported by IGD06N60TATMA1?

The MOSFET supports a drain-source voltage of up to 600 V, making it suitable for applications requiring high-voltage handling, such as power supplies and industrial motor controls.

How does the on-resistance of IGD06N60TATMA1 benefit power efficiency?

With an on-resistance of only 0.68 ??, the device minimizes conduction losses during operation. This leads to improved energy efficiency and reduced thermal management requirements in end applications.

Is the IGD06N60TATMA1 suitable for use in harsh environments?

Yes, it operates reliably within a wide temperature range from -55??C to 150??C, making it well-suited for industrial and demanding outdoor or high-temperature environments.

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产品中间询盘

What mounting options are available for IGD06N60TATMA1?

The device is provided in a TO-263-3 surface-mount package, enabling automated PCB assembly and efficient thermal dissipation in compact system layouts.

Which applications benefit most from IGD06N60TATMA1’s capabilities?

It excels in power management tasks such as switch mode power supplies, motor drives, inverter circuits, and general-purpose switching, thanks to its high voltage rating, low on-resistance, and robust construction.

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