IGB15N120S7ATMA1 Overview
The IGB15N120S7ATMA1 is a high-performance insulated-gate bipolar transistor (IGBT) engineered for demanding industrial power management, motor control, and inverter systems. It delivers reliable switching and conduction efficiency, making it suitable for applications requiring robust voltage handling and low switching losses. This device is optimized for high-voltage environments, ensuring stability and consistent operation under continuous load. Its advanced design enables integration into compact circuit layouts while maintaining operational integrity. For sourcing and design-in support, visit IC Manufacturer.
IGB15N120S7ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | IGBT (Insulated-Gate Bipolar Transistor) |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Collector Current (IC) | 30 A |
| Gate-Emitter Voltage (VGE) | ?I20 V |
| Maximum Power Dissipation (Ptot) | 104 W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.65 V |
| Operating Junction Temperature (Tj) | -40??C to 150??C |
| Package | TO-220-3 |
IGB15N120S7ATMA1 Key Features
- High collector-emitter voltage rating of 1200 V supports robust operation in industrial inverter and motor drive systems, providing enhanced safety margins.
- Low collector-emitter saturation voltage (1.65 V) minimizes conduction losses, improving overall energy efficiency in high-current switching applications.
- Wide operating junction temperature range from -40??C to 150??C ensures reliable performance in challenging thermal environments.
- High collector current capability up to 30 A enables use in demanding power conversion and control circuits.
- Compact TO-220-3 package supports efficient heat dissipation while facilitating straightforward PCB integration.
- ?I20 V gate-emitter voltage tolerance ensures compatibility with a broad range of gate drive circuits.
IGB15N120S7ATMA1 Advantages vs Typical Alternatives
This IGBT offers a superior combination of high voltage capability, low saturation voltage, and robust thermal performance compared to standard alternatives. Its efficiency in reducing switching and conduction losses, along with a wide operating temperature range, delivers improved reliability and longer system lifetimes for industrial and motor control applications using related function words such as ??efficiency,?? ??reliability,?? and ??integration.??
🔥 Best-Selling Products
-

Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
-

Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
-

Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
-

Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Industrial motor drives: The device??s high voltage and current ratings make it suitable for use in industrial motor drive circuits where efficiency and reliable operation are critical for controlling three-phase motors, pumps, and fans.
- Power inverters: Its robust performance supports power inverter designs for uninterruptible power supplies (UPS), renewable energy systems, and industrial automation equipment where stable DC-to-AC conversion is essential.
- Welding equipment: The transistor??s capability to handle high pulses and maintain thermal integrity makes it ideal for switching applications in industrial welding systems.
- General-purpose high-voltage switching: Suitable for a wide range of high-voltage, high-current switching tasks in industrial environments requiring fast and efficient power handling.
IGB15N120S7ATMA1 Brand Info
The IGB15N120S7ATMA1 is part of a trusted portfolio of advanced IGBT solutions tailored for modern industrial needs. Designed for engineers and system integrators, it embodies the latest in semiconductor technology by combining high-voltage endurance, current capability, and efficient thermal characteristics. This product addresses the rigorous standards of industrial power electronics, motor control, and automation markets, reinforcing the brand??s commitment to innovation, reliability, and application-focused engineering.
FAQ
What is the maximum collector-emitter voltage for the IGB15N120S7ATMA1?
The maximum collector-emitter voltage rating is 1200 V, making it suitable for high-voltage industrial applications such as motor drives and power inverters that require robust voltage tolerance for safe and reliable operation.
🌟 Featured Products
-

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Which package type is available for this IGBT?
This device is supplied in a TO-220-3 package, which is widely used in industrial and commercial power electronics for its balance of compactness, ease of mounting, and effective heat dissipation characteristics.
What is the typical collector current rating?
The typical collector current is rated at 30 A, which enables the device to handle significant current loads in demanding applications like industrial machinery, welding equipment, and power conversion systems.
📩 Contact Us
What temperature range can the IGB15N120S7ATMA1 operate in?
The operating junction temperature range spans from -40??C to 150??C, supporting deployment in a variety of environments from cold storage to high-temperature industrial settings, ensuring dependable performance under fluctuating conditions.
How does the low saturation voltage benefit users?
The low collector-emitter saturation voltage of 1.65 V reduces power losses during conduction, allowing for higher system efficiency and lower heat generation, which contributes to more compact designs and improved energy savings in end applications.





