IAUTN06S5N008TATMA1 Overview
The IAUTN06S5N008TATMA1 is a high-performance MOSFET solution optimized for demanding industrial and automotive applications. Designed to deliver efficient switching and robust power handling, this device supports engineers looking for reliability and compact integration in power management circuits. Its advanced packaging and low RDS(on) provide superior thermal and electrical performance, making it an ideal fit for modern designs where board space, efficiency, and durability are essential. Discover more industrial-grade solutions at IC Manufacturer.
IAUTN06S5N008TATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 80 A |
| RDS(on) (Max) | 8 m?? |
| Gate Charge (Qg) | 38 nC |
| Package Type | PG-TDSON-8 |
| Mounting Style | Surface Mount (SMD/SMT) |
| Operating Temperature Range | -55??C to +175??C |
IAUTN06S5N008TATMA1 Key Features
- Low RDS(on) of just 8 m?? enables minimal power losses, improving overall energy efficiency in high-current applications.
- High continuous drain current rating of 80 A allows for robust power delivery, supporting high-load circuits without compromising stability.
- Advanced PG-TDSON-8 surface-mount package ensures efficient heat dissipation and compact PCB footprint, meeting stringent design requirements.
- Wide operating temperature range from -55??C to +175??C enhances reliability in harsh industrial and automotive environments.
IAUTN06S5N008TATMA1 Advantages vs Typical Alternatives
With its low on-resistance and high current capability, the IAUTN06S5N008TATMA1 outperforms standard MOSFETs in terms of power efficiency and heat management. The advanced PG-TDSON-8 package brings superior thermal performance and board space savings, while the wide temperature tolerance ensures dependable operation under demanding conditions. Its robust electrical characteristics offer a competitive edge for power-critical designs.
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Typical Applications
- Switching power supplies and DC-DC converters, where low switching losses and high efficiency are critical to system performance and thermal management.
- Automotive electronic control units and power distribution modules that demand high reliability and consistent performance in extended temperature ranges.
- Motor drive circuits in industrial automation, supporting precise control and sustained current loads under dynamic operating conditions.
- Battery management systems and protection circuits, leveraging the device??s low RDS(on) for optimized power flow and safety margins.
IAUTN06S5N008TATMA1 Brand Info
The IAUTN06S5N008TATMA1 is part of a specialized portfolio from a leading manufacturer committed to advancing power semiconductor technology. This MOSFET exemplifies the brand??s dedication to quality, integrating advanced materials and innovative packaging to address the rigorous demands of automotive and industrial sectors. Designed for engineers prioritizing efficiency, reliability, and form factor, this device reflects the brand??s reputation for delivering components that excel in real-world, mission-critical environments.
FAQ
What is the main advantage of using the IAUTN06S5N008TATMA1 in power management circuits?
The device??s low RDS(on) and high current rating allow designs to achieve higher efficiency with reduced power loss, which is critical in applications where thermal performance and energy savings are priorities.
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Can this MOSFET be used in automotive environments with wide temperature fluctuations?
Yes, the IAUTN06S5N008TATMA1 is rated for an operating temperature range of -55??C to +175??C, making it suitable for automotive applications that experience broad temperature variations and harsh conditions.
What benefits does the PG-TDSON-8 package provide for industrial designs?
This advanced surface-mount package offers enhanced thermal dissipation and a compact footprint, allowing designers to create smaller, more efficient PCBs without sacrificing heat management or electrical performance.
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Is this component suitable for high-frequency switching applications?
With a gate charge of 38 nC and optimized design parameters, the device supports efficient high-frequency switching, contributing to reduced switching losses and improved overall converter efficiency.
How does the IAUTN06S5N008TATMA1 contribute to system reliability?
The robust construction, wide thermal range, and reliable electrical characteristics ensure stable operation in demanding environments, helping engineers build systems that maintain performance over long operational lifespans.
