IAUT300N10S5N015ATMA1 Overview
The IAUT300N10S5N015ATMA1 is a high-performance MOSFET designed for industrial and automotive power management applications. This device delivers low on-resistance and robust switching characteristics, making it ideal for demanding environments where efficiency and reliability are crucial. Engineered for optimal thermal performance and fast switching, it supports high-current loads and voltages, ensuring stable operation under challenging conditions. Its advanced silicon technology and compact package make it a preferred choice for designs requiring high power density and long-term durability. For more details, visit IC Manufacturer.
IAUT300N10S5N015ATMA1 Technical Specifications
| Attribute | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 300A |
| RDS(on) (Max) | 1.5 m?? |
| Package Type | TO-220 |
| Mounting Style | Through Hole |
| Technology | Trench MOSFET |
| Polarity | N-Channel |
IAUT300N10S5N015ATMA1 Key Features
- Ultra-low RDS(on) of just 1.5 m??, minimizing conduction losses and improving overall energy efficiency in power switching applications.
- High drain current capacity up to 300A enables reliable operation in high-power circuits, reducing the need for multiple parallel devices.
- 100V drain-source voltage rating provides robust voltage headroom for automotive and industrial environments where transient voltages are common.
- TO-220 package with through-hole mounting ensures excellent thermal performance and mechanical stability for heavy-duty operation.
IAUT300N10S5N015ATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out with its exceptionally low on-resistance and high current handling, offering reduced power dissipation and higher system efficiency. Compared to standard alternatives, it enables more compact, reliable designs due to its robust voltage tolerance and advanced trench technology. These function-focused enhancements support longer lifespan and greater design flexibility in high-demand applications.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Automotive power management systems: Ideal for use in electric vehicle battery management, motor drive circuits, and DC-DC converters, where high current and low losses are essential for performance and thermal management.
- Industrial motor control units: Ensures efficient switching in high-power industrial automation or robotics applications, improving reliability and uptime.
- Power supplies and inverters: Suitable for use in high-efficiency switched-mode power supplies, UPS systems, and inverter designs where fast switching and high current are required.
- Load switching and protection: Provides robust switching and protection for heavy loads in both automotive and industrial control systems.
IAUT300N10S5N015ATMA1 Brand Info
The IAUT300N10S5N015ATMA1 is developed by a leading manufacturer in the field of power semiconductors. This product reflects a commitment to quality, innovation, and reliability, meeting the needs of applications requiring high efficiency and robust electrical performance. The device is engineered with advanced trench MOSFET technology and undergoes stringent quality assurance to ensure dependable operation in industrial and automotive environments. Its design supports long-term durability and efficient integration into modern electronic systems.
FAQ
What benefits does the low on-resistance of this MOSFET provide?
The extremely low RDS(on) of 1.5 m?? significantly reduces conduction losses, enhancing efficiency and minimizing heat generation. This directly contributes to improved system reliability and lower cooling requirements.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Is the device suitable for high-current applications?
Yes, with a continuous drain current rating of 300A, this MOSFET is well-suited for high-current scenarios such as automotive powertrains, industrial drives, and battery management systems that demand robust performance.
What advantages does the TO-220 package offer?
The TO-220 package provides excellent thermal dissipation and mechanical strength. Its through-hole design simplifies integration into power boards while supporting reliable operation under high loads and temperatures.
📩 Contact Us
What type of technology is used in this MOSFET?
This device utilizes advanced trench MOSFET technology, allowing for lower on-resistance and improved switching characteristics compared to older planar designs, which is important for achieving higher efficiency in modern applications.
Can it be used in automotive environments?
Absolutely. With its 100V drain-source voltage and high current capability, the device is ideal for automotive power management, electric vehicle systems, and other demanding automotive electronics applications that require rugged performance.
