IAUT260N10S5N019ATMA1 Overview
The IAUT260N10S5N019ATMA1 is a highly efficient MOSFET power transistor designed for demanding industrial and automotive switching applications. With a robust N-channel structure, this component offers low on-state resistance and high current handling, making it ideal for energy-sensitive environments. Its advanced packaging and silicon technology ensure reliable operation across a wide range of temperatures and voltages. Sourcing specialists and engineers will appreciate its balance of performance, integration, and ruggedness. For comprehensive semiconductor solutions, visit IC Manufacturer.
IAUT260N10S5N019ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 260 A |
| On-State Resistance (RDS(on)) | 1.9 m?? |
| Gate Charge (Qg) | Not specified |
| Operating Temperature Range | -55??C to +175??C |
| Package Type | TO-220 |
| Polarity | N-Channel |
| Mounting Style | Through Hole |
IAUT260N10S5N019ATMA1 Key Features
- Exceptional low RDS(on) of just 1.9 m?? delivers minimal conduction losses and improved system efficiency in high-current circuits.
- High current capability up to 260 A ensures reliable switching performance in heavy load automotive and industrial power stages.
- Wide operating temperature range from -55??C to +175??C supports robust operation in harsh environments and demanding thermal conditions.
- TO-220 package with through-hole mounting provides mechanical stability and simplifies thermal management for power electronics designs.
IAUT260N10S5N019ATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out due to its ultra-low on-resistance, supporting higher efficiency and reduced heat generation compared to standard alternatives. Its high current handling and wide temperature range improve reliability and longevity in mission-critical applications. The robust TO-220 package further enhances mechanical and thermal performance, making it a superior choice for engineers seeking dependable power switching solutions.
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Typical Applications
- Automotive powertrain and body electronics: The device??s high current capability and low RDS(on) make it ideal for engine control units, electric drive modules, and battery management systems in modern vehicles.
- Industrial motor control: Can be used in three-phase inverters, servo drives, and robotics where efficient high-current switching is required.
- Switching power supplies: Suitable for use in high-efficiency DC-DC converters and SMPS thanks to its low conduction losses and rugged package.
- Renewable energy inverters: Supports reliable and efficient operation in solar or wind inverter designs, where high current and temperature endurance are essential.
IAUT260N10S5N019ATMA1 Brand Info
The IAUT260N10S5N019ATMA1 is part of a reputable line of advanced MOSFETs engineered to meet the stringent demands of automotive and industrial sectors. This product embodies the brand??s commitment to quality, offering a blend of power efficiency, reliability, and thermal resilience. It is specifically tailored for applications requiring robust performance, ensuring consistent operation even in challenging environments and under heavy electrical loads.
FAQ
What is the maximum current that IAUT260N10S5N019ATMA1 can handle continuously?
The device supports a continuous drain current of up to 260 A, making it suitable for high-power automotive and industrial switching applications where substantial loads are present.
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Which package type does this MOSFET use, and what are its benefits?
This component is offered in a TO-220 package, which is widely adopted for its through-hole mounting and excellent heat dissipation characteristics, enabling easier integration into power circuits.
What makes the IAUT260N10S5N019ATMA1 suitable for automotive environments?
Its wide operating temperature range from -55??C to +175??C and low on-state resistance ensure reliable performance and energy efficiency in the demanding conditions encountered in automotive systems.
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How does the low RDS(on) value benefit my application?
A low RDS(on) of 1.9 m?? reduces power losses during conduction, improves overall efficiency, and minimizes heat generation, which is crucial for high-current and energy-sensitive designs.
Is the IAUT260N10S5N019ATMA1 suitable for renewable energy inverter designs?
Yes, the device??s high current rating, robust thermal performance, and efficient switching characteristics make it a strong candidate for use in solar and wind inverter systems, supporting reliability and reduced energy loss.
