IAUS300N08S5N012ATMA1 Power MOSFET, 80V, 300A, S5N-12 Package

  • Designed for efficient switching and control in electronic circuits, supporting reliable device operation.
  • Features a TO-263 package, enabling easier mounting and potential board-space savings in compact designs.
  • Suitable for use in power management applications, helping to regulate voltage and current safely.
  • The IAUS300N08S5N012ATMA1 supports automotive and industrial systems, enhancing system efficiency and performance.
  • Manufactured to meet consistent standards, ensuring dependable long-term operation in demanding environments.
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IAUS300N08S5N012ATMA1 Overview

The IAUS300N08S5N012ATMA1 is a high-performance N-channel MOSFET engineered for demanding industrial and automotive power management. It delivers exceptional efficiency and switching performance in a compact, robust package, making it ideal for designs requiring precise load control, low conduction losses, and reliable operation in harsh conditions. Featuring an advanced silicon process, this transistor supports high current handling and low on-state resistance, helping designers achieve compact, cost-effective, and energy-efficient solutions. For more details, visit the IC Manufacturer website.

IAUS300N08S5N012ATMA1 Technical Specifications

ParameterValue
TypeN-Channel MOSFET
Drain-Source Voltage (VDS)80 V
Continuous Drain Current (ID)300 A
On-Resistance (RDS(on))1.2 m??
PackagePG-HSOF-8-3
Mounting TypeSurface Mount
TechnologyAutomotive Grade MOSFET
Operating Temperature Range-55??C to +175??C
QualificationAEC-Q101

IAUS300N08S5N012ATMA1 Key Features

  • Extremely low on-resistance of 1.2 m?? ensures minimal conduction losses, maximizing energy efficiency in power conversion applications.
  • High current capability up to 300 A supports robust operation in high-load environments, such as automotive powertrains and industrial inverters.
  • Automotive grade qualification (AEC-Q101) guarantees high reliability and consistent performance under demanding temperature and voltage conditions.
  • Compact PG-HSOF-8-3 package enables space-saving PCB layouts and improved thermal management for dense electronic designs.

IAUS300N08S5N012ATMA1 Advantages vs Typical Alternatives

This N-channel MOSFET stands out for its ultra-low RDS(on) and high current handling, leading to lower power losses and higher system efficiency compared to conventional devices. The automotive-grade reliability and wide temperature range improve uptime and longevity in harsh operating environments, while the compact package enables greater design flexibility and higher power density for industrial and automotive engineers.

Typical Applications

  • Automotive powertrain modules benefit from the device??s high current rating and rugged design, ensuring reliable switching and energy efficiency even under continuous heavy loads and vibration.
  • Industrial DC-DC converters use this MOSFET to achieve fast switching speeds and reduced conduction losses, supporting advanced power management strategies.
  • Motor drives and electronic control units (ECUs) leverage its efficiency and thermal capabilities for precise and robust motor control in both automotive and industrial automation sectors.
  • Battery management systems and high-current load switches require the low on-resistance and automotive qualification for safe, efficient, and long-lasting operation.

IAUS300N08S5N012ATMA1 Brand Info

The IAUS300N08S5N012ATMA1 is a specialized automotive-grade power MOSFET designed to meet stringent industry standards for reliability and performance. Manufactured in a compact PG-HSOF-8-3 surface-mount package, it is engineered for high-current, low-loss switching. Its robust build quality, rigorous AEC-Q101 qualification, and adaptability to harsh environments make it a trusted choice for automotive and industrial applications requiring precision, durability, and energy efficiency.

FAQ

What makes this MOSFET suitable for automotive and industrial use?

The device meets AEC-Q101 qualification standards, ensuring it can withstand the high reliability and safety requirements typical in automotive and industrial applications. Its wide operating temperature range and robust package further enhance suitability for these demanding sectors.

How does the low RDS(on) value benefit my design?

With an on-resistance of just 1.2 m??, this MOSFET minimizes conduction losses, allowing for greater energy efficiency and lower heat generation. This can lead to smaller cooling requirements and higher overall system performance.

What are the advantages of the PG-HSOF-8-3 package?

The compact PG-HSOF-8-3 package provides excellent thermal management and allows for space-efficient PCB layouts. This is especially valuable in high-density designs or applications with strict space constraints.

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Can this device be used in high-current switching applications?

Yes, its 300 A continuous drain current rating makes it ideal for high-current switching tasks in power electronics, such as inverters, motor drives, and power distribution modules.

Is the IAUS300N08S5N012ATMA1 suitable for harsh environments?

Absolutely. It operates reliably over a -55??C to +175??C temperature range and features automotive-grade construction, making it well-suited for use in environments subject to wide temperature variations and mechanical stress.

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