IAUC120N06S5N017ATMA1 N-Channel MOSFET, 60V 120A, TO-220 Package

  • Designed for efficient switching, this device helps users manage and control power in electronic circuits.
  • Low on-resistance minimizes conduction losses, supporting improved overall performance in demanding applications.
  • Compact package allows for board-space savings and easier integration into space-constrained designs.
  • Suitable for use in motor control systems, where precise switching enhances operational efficiency and safety.
  • Manufactured to support consistent operation, reducing the risk of failure in long-term installations.
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产品上方询盘

IAUC120N06S5N017ATMA1 Overview

The IAUC120N06S5N017ATMA1 is a high-efficiency N-channel Power MOSFET designed for use in demanding industrial and automotive applications. It delivers robust switching performance, low on-resistance, and enhanced thermal stability. This device is well-suited for applications requiring fast switching, high power density, and reliable operation under a wide range of load conditions. Its optimized design enables engineers to maximize efficiency and system reliability. For further details, visit IC Manufacturer.

IAUC120N06S5N017ATMA1 Technical Specifications

Category MOSFETs – Single, N-Channel
Mounting Type Surface Mount
Package / Case PG-TDSON-8 5×6
Voltage – Drain Source (Vds) 60V
Current – Continuous Drain (Id) 120A (at Tc)
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 60A, 10V
Operating Temperature Range -55??C to +175??C
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10V
Input Capacitance (Ciss) 6400 pF @ 25V
Polarity N-Channel

IAUC120N06S5N017ATMA1 Key Features

  • Extremely low Rds(on) of 1.7 m?? ensures minimal conduction losses, which translates into greater energy efficiency and less heat generation in high-current applications.
  • High continuous drain current rating of 120A allows for reliable performance in power conversion, motor control, and battery management systems.
  • Wide operating temperature range up to 175??C provides robust operation in harsh industrial or automotive environments, increasing application reliability.
  • Surface-mount PG-TDSON-8 5×6 package enables compact PCB layouts and supports automated assembly processes for scalable manufacturing.
  • Optimized gate charge and capacitance values deliver fast switching characteristics, reducing overall switching losses in high-frequency designs.

IAUC120N06S5N017ATMA1 Advantages vs Typical Alternatives

This MOSFET stands out due to its ultra-low on-resistance and high current capability, providing superior efficiency and thermal performance compared to standard N-channel devices. Its robust package and wide temperature tolerance ensure reliable operation in challenging environments, making it a preferred choice for engineers seeking both performance and dependability in power switching solutions.

Typical Applications

  • Motor control systems in industrial automation, where fast switching and high current handling are critical for ensuring precise movement and long-term reliability.
  • Automotive powertrain modules, especially in electric vehicles, where efficient energy management and thermal robustness are essential for optimal performance.
  • Switch-mode power supplies and DC-DC converters that demand low conduction losses and minimal heat dissipation for compact, high-density designs.
  • Battery management systems requiring high efficiency and consistent performance over wide temperature and load ranges.

IAUC120N06S5N017ATMA1 Brand Info

The IAUC120N06S5N017ATMA1 is manufactured by a leading global semiconductor company recognized for its innovation in power electronics. This device reflects the brand??s commitment to delivering advanced MOSFET solutions optimized for efficiency, reliability, and integration. Its engineering is tailored for modern industrial and automotive sectors, providing a dependable option for engineers and procurement specialists seeking a high-performance, surface-mount N-channel MOSFET.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The device supports a maximum drain-source voltage (Vds) of 60V, making it suitable for a wide range of power switching and conversion applications where this voltage level is required.

How does the low Rds(on) value benefit my design?

A low Rds(on) of just 1.7 m?? ensures minimal power loss during conduction, which leads to higher overall efficiency and reduced heat buildup, especially vital in high-current or high-frequency circuits.

Is this MOSFET suitable for high-temperature environments?

Yes, with an operating temperature range from -55??C to +175??C, it is designed to deliver reliable performance in demanding industrial and automotive environments where elevated ambient temperatures are common.

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产品中间询盘

What type of package does this MOSFET use, and why is it advantageous?

It is offered in a PG-TDSON-8 5×6 surface-mount package, which provides excellent thermal management, supports automated assembly, and allows for more compact PCB designs in high-density systems.

Can this device be used in automotive powertrain or battery management systems?

Absolutely. Its high current capability, efficiency, and robust thermal tolerance make it a strong fit for automotive powertrain electronics and battery management systems requiring reliable switching under varying loads and temperatures.

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