IAUC120N06S5L032ATMA1 N-Channel MOSFET 60V 120A TO-220 Infineon Transistor

  • Delivers efficient switching performance, making it suitable for controlling power in electronic circuits.
  • Features an N-channel MOSFET design, providing low on-resistance for reduced conduction losses.
  • Compact package minimizes board-space use, supporting size-constrained applications and easier PCB layout.
  • Ideal for use in power supply circuits, aiding stable voltage regulation and thermal management.
  • Tested to ensure consistent operation, supporting long-term reliability in demanding environments.
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产品上方询盘

IAUC120N06S5L032ATMA1 Overview

The IAUC120N06S5L032ATMA1 is a high-performance N-channel MOSFET engineered for efficiency in demanding industrial and automotive environments. Designed with advanced silicon technology, this power transistor delivers low on-resistance and robust current handling, making it ideal for applications requiring precise switching and minimal energy loss. Its compact PG-TDSON-8 SMD package ensures easy integration into modern PCBs, supporting both high-density and high-reliability system requirements. For buyers and engineers needing a reliable, versatile MOSFET solution, explore more at IC Manufacturer.

IAUC120N06S5L032ATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id)120 A
Rds(on) (Max)3.2 m??
Package / CasePG-TDSON-8 (SMD)
PolarityN-Channel
Mounting TypeSurface Mount (SMD/SMT)
Operating Temperature Range-55??C to +175??C
Product CategoryMOSFETs – Single

IAUC120N06S5L032ATMA1 Key Features

  • Low maximum Rds(on) of 3.2 m?? enables high efficiency and reduces conduction losses, critical for power-sensitive applications.
  • High continuous drain current capability (120 A) supports demanding load switching and motor drive circuits, ensuring robust performance under heavy loads.
  • Wide operating temperature range (-55??C to +175??C) enhances reliability for automotive and industrial use, even in harsh environments.
  • Surface-mount PG-TDSON-8 package allows for compact PCB layouts and automated assembly, streamlining production and design flexibility.

IAUC120N06S5L032ATMA1 Advantages vs Typical Alternatives

Compared to typical MOSFET alternatives, this device offers a significantly lower on-resistance, allowing for reduced power dissipation and improved thermal management. Its high current rating and robust package make it suitable for compact, high-density boards without sacrificing performance. The broad temperature range and proven SMD design contribute to greater reliability and ease of integration in both automotive and industrial power systems.

Typical Applications

  • Motor drive circuits in automotive and industrial settings, where precise high-current switching and low conduction losses are essential for efficiency and reliability.
  • High-frequency DC-DC converters, benefiting from low Rds(on) and high current handling to improve power conversion efficiency.
  • Battery management systems (BMS) in electric vehicles or energy storage, where robust MOSFETs are critical for safe, efficient charge/discharge cycles.
  • General-purpose power switching in industrial automation, lighting controls, and other equipment needing compact, reliable N-channel MOSFETs.

IAUC120N06S5L032ATMA1 Brand Info

This device is part of a reputable portfolio of power semiconductors, known for delivering reliable switching performance and energy efficiency. The IAUC120N06S5L032ATMA1 is designed specifically for demanding environments, leveraging advanced packaging and silicon processes to ensure consistent quality and long-term durability. Its proven performance and compatibility with surface-mount assembly make it a trusted choice for engineers seeking robust MOSFET solutions for automotive and industrial designs.

FAQ

What package type does the IAUC120N06S5L032ATMA1 use?

This component is supplied in the PG-TDSON-8 surface-mount package, which provides excellent thermal characteristics and is well-suited for automated assembly processes in high-density circuit boards.

What is the maximum drain-source voltage supported?

The device can withstand a maximum drain-source voltage (Vds) of 60 V, making it suitable for a range of low- and medium-voltage power switching applications in both automotive and industrial sectors.

How does the Rds(on) value benefit my design?

With a maximum Rds(on) of 3.2 m??, this MOSFET ensures minimal conduction losses, which is critical for improving overall system efficiency and reducing heat generation in power circuits.

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产品中间询盘

Is this device suitable for high-current applications?

Yes, it supports a continuous drain current of up to 120 A, making it ideal for applications such as motor control, power converters, and battery management systems that require high current handling.

Can it operate in extreme temperatures?

The device is rated for operation from -55??C to +175??C, allowing for dependable performance in both harsh industrial environments and automotive systems exposed to wide temperature variations.

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