IAUC120N04S6L012ATMA1 N-Channel MOSFET Power Transistor, DFN8 Package

  • Designed for efficient switching control, this component helps manage power flow in electronic circuits.
  • Offers a specific voltage and current rating, supporting safe operation in demanding environments.
  • The compact package type allows for reduced board space, enabling more streamlined hardware designs.
  • Suitable for use in power supply modules, where it supports stable and reliable voltage conversion.
  • Manufactured to meet quality standards, minimizing risks of failure during extended use.
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产品上方询盘

IAUC120N04S6L012ATMA1 Overview

The IAUC120N04S6L012ATMA1 is a robust N-channel MOSFET designed for high-performance power switching and load management applications. Engineered with advanced silicon technology, it delivers low on-resistance and rapid switching characteristics, making it ideal for demanding industrial and automotive environments. With a focus on energy efficiency and thermal stability, this device is well-suited for circuits requiring reliable voltage and current handling. For engineers and sourcing professionals seeking dependable semiconductor solutions, the IAUC120N04S6L012ATMA1 provides a balance of performance, integration, and cost-effectiveness. IC Manufacturer

IAUC120N04S6L012ATMA1 Technical Specifications

ParameterValue
Device TypeN-Channel MOSFET
Drain-to-Source Voltage (VDS)40 V
Continuous Drain Current (ID)120 A
RDS(on) (Max)1.2 m??
Gate Charge (Qg)67 nC
PackagePG-TDSON-8
Mounting StyleSurface Mount
Operating Temperature Range-55??C to +175??C
PolarityN-Channel

IAUC120N04S6L012ATMA1 Key Features

  • Ultra-low on-resistance of 1.2 m?? minimizes conduction losses, leading to higher efficiency in power conversion.
  • High continuous drain current capability (120 A) enables robust load handling in demanding applications such as motor drives and power supplies.
  • Optimized gate charge (67 nC) supports fast switching performance, essential for high-frequency operation and reduced switching losses.
  • Wide operating temperature range from -55??C to +175??C ensures reliability even in harsh industrial and automotive environments.

IAUC120N04S6L012ATMA1 Advantages vs Typical Alternatives

Compared to standard N-channel MOSFETs, this device offers significantly lower RDS(on) and higher current handling, which translates to reduced power loss and enhanced thermal performance. The efficient gate charge also enables faster switching and improved energy savings in high-frequency designs. Its robust package and broad temperature range provide superior reliability for mission-critical industrial and automotive applications.

Typical Applications

  • Power management circuits in automotive systems, including electric vehicle battery management, where low conduction loss and high current capability are critical for system efficiency and thermal performance.
  • High-efficiency DC-DC converters for industrial automation, benefiting from fast switching and robust current handling.
  • Motor control units in factory automation, where reliability and precise switching speeds contribute to overall system performance.
  • Load switches and protection circuits, leveraging the device??s low RDS(on) and wide thermal operating range for dependable operation.

IAUC120N04S6L012ATMA1 Brand Info

The IAUC120N04S6L012ATMA1 is produced by a leading global semiconductor manufacturer known for innovative and reliable power management components. This MOSFET is part of a comprehensive product line designed to address the evolving demands of automotive, industrial, and high-performance applications. By focusing on low on-resistance, high current capability, and robust packaging, the manufacturer ensures this component meets the stringent requirements of today’s energy-efficient and space-constrained designs.

FAQ

What makes the IAUC120N04S6L012ATMA1 suitable for high-current applications?

This device supports a continuous drain current of 120 A and features ultra-low on-resistance, allowing it to handle substantial loads efficiently. Its design minimizes conduction losses, making it ideal for demanding power management systems.

Can this MOSFET operate reliably in harsh environments?

Yes, the wide operating temperature range from -55??C to +175??C ensures stable performance in both extreme cold and high-temperature environments, making it a strong choice for automotive and industrial settings.

What benefits does the low gate charge offer in switching applications?

The optimized gate charge of 67 nC enables faster switching transitions, which reduces switching losses and supports higher efficiency in high-frequency and pulse-width modulation (PWM) circuit designs.

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产品中间询盘

Is the IAUC120N04S6L012ATMA1 suitable for compact PCB layouts?

Absolutely. The PG-TDSON-8 surface mount package allows for high power density in compact layouts, making it well-suited for modern designs where board space is at a premium.

Which applications can leverage the full potential of this device?

Applications such as automotive power management, industrial DC-DC converters, motor control, and load switching all benefit from its combination of low on-resistance, high current capability, and robust thermal performance.

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