IAUC100N04S6L014ATMA1 Overview
The IAUC100N04S6L014ATMA1 is a high-performance N-channel MOSFET designed for demanding power management and switching applications. This device stands out for its low on-resistance and robust current handling, enabling efficient energy transfer and minimal power loss. Its advanced trench technology ensures reliable operation across a wide temperature range, making it suitable for industrial, automotive, and high-frequency circuits. With a compact SuperSO8 footprint, it offers flexible integration in dense PCB layouts. For more details, visit IC Manufacturer.
IAUC100N04S6L014ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 100 A |
| On-Resistance (RDS(on)) | 1.4 m?? (max) |
| Gate Charge (Qg) | 61 nC |
| Package | SuperSO8 |
| Technology | Trench MOSFET |
| Operating Temperature Range | -55??C to 175??C |
IAUC100N04S6L014ATMA1 Key Features
- Ultra-low on-resistance of 1.4 m?? ensures minimal conduction losses, maximizing efficiency in high-current switching applications.
- Robust 100 A continuous drain current rating supports demanding load requirements, making the device suitable for power-dense designs.
- Advanced trench technology delivers improved switching performance and reliability over extended temperature ranges.
- Compact SuperSO8 package enables space-saving PCB layouts and easier integration into modern electronic assemblies.
- Wide operating temperature range from -55??C to 175??C ensures performance stability in harsh environments.
IAUC100N04S6L014ATMA1 Advantages vs Typical Alternatives
Compared to typical N-channel MOSFETs, the IAUC100N04S6L014ATMA1 offers significantly lower on-resistance and higher current capacity. This results in reduced energy losses, improved power conversion efficiency, and enhanced thermal management. Its compact SuperSO8 package further streamlines integration, while advanced trench technology boosts reliability in industrial and automotive settings.
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Typical Applications
- High-efficiency DC-DC converters benefit from the low RDS(on) and high current handling, allowing for compact power stages and reduced heat generation in power supply designs.
- Motor drive circuits in industrial automation and automotive systems can utilize the device’s robust current ratings for reliable switching and motor control functions.
- Battery management systems leverage the MOSFET’s efficiency and thermal stability to ensure safe and effective energy distribution in electric vehicles and energy storage solutions.
- Load switching in distributed power architectures, where low conduction losses and high reliability are essential for managing multiple voltage rails and protecting sensitive electronics.
IAUC100N04S6L014ATMA1 Brand Info
The IAUC100N04S6L014ATMA1 is engineered to meet the rigorous demands of modern power electronics. It exemplifies the manufacturer’s commitment to innovation by integrating advanced trench MOSFET technology within a compact package. This device is widely recognized for its balance of low on-resistance, high current capability, and operational durability, making it a preferred solution in the field of industrial and automotive electronics.
FAQ
What are the main benefits of using the IAUC100N04S6L014ATMA1 in power management applications?
This device’s ultra-low on-resistance and high current capability minimize energy loss and heat generation, which are critical for efficient power management. Its reliability and compact package also streamline design integration for engineers focused on high-performance systems.
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How does the SuperSO8 package benefit PCB design?
The SuperSO8 package provides a smaller footprint compared to traditional power packages, enabling higher component density on the PCB. This facilitates flexible placement in compact or space-constrained designs, making it ideal for modern electronic assemblies.
Can the IAUC100N04S6L014ATMA1 operate in extreme temperature environments?
Yes, this MOSFET is specified for operation from -55??C to 175??C, ensuring stable performance in both low- and high-temperature industrial or automotive environments. This wide temperature range increases its suitability for applications requiring high reliability.
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What makes trench MOSFET technology advantageous in this device?
Trench MOSFET technology reduces on-resistance and optimizes switching speed, resulting in lower conduction losses and enhanced efficiency. This design approach also promotes long-term device durability and robust performance under heavy load conditions.
Is the IAUC100N04S6L014ATMA1 suitable for use in automotive systems?
With its high current capability, low RDS(on), and broad temperature range, this MOSFET is well-suited for automotive applications such as motor control, battery management, and power distribution, where efficiency and reliability are vital requirements.
