HT1MOA4S30/E/3J Overview
The HT1MOA4S30/E/3J is a high-performance semiconductor device designed for industrial and automotive power management applications. It offers robust electrical characteristics, ensuring reliable operation under demanding conditions. With its optimized thermal performance and compact packaging, this component is engineered to deliver efficient power regulation and switching capabilities. The device supports a wide voltage range and features integrated protection mechanisms that enhance system stability and longevity. Available through IC Manufacturer, it provides engineers and sourcing specialists a dependable solution for optimizing energy efficiency and operational safety in complex electronic systems.
HT1MOA4S30/E/3J Technical Specifications
| Parameter | Value |
|---|---|
| Maximum Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at 25??C | 4 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| On-Resistance (RDS(on)) | Minimum 30 m?? |
| Power Dissipation (PD) | 1.5 W |
| Operating Temperature Range | -55??C to +150??C |
| Gate Charge (Qg) | 15 nC |
| Package Type | Surface Mount SOT-23 |
HT1MOA4S30/E/3J Key Features
- Low On-Resistance: The device??s minimal RDS(on) reduces conduction losses, enhancing power efficiency and thermal management in compact systems.
- Wide Operating Voltage Range: Supports up to 30 V, making it versatile for various power supply and load switching applications.
- High Current Handling Capability: With a continuous drain current rating of 4 A, it accommodates moderate power levels suitable for industrial control circuits.
- Compact SOT-23 Packaging: Enables easy integration into space-constrained circuit boards while maintaining excellent thermal dissipation.
- Robust Thermal Performance: Operates reliably up to 150??C, ensuring stable performance in harsh environments.
- Efficient Gate Drive: Low gate charge minimizes switching losses, improving overall device efficiency during rapid switching operations.
- Integrated Protection: The device inherently supports stable switching behavior, contributing to system reliability and reduced failure rates.
HT1MOA4S30/E/3J Advantages vs Typical Alternatives
Compared to typical MOSFET alternatives, this device offers a balanced combination of low on-resistance and high current capacity within a compact footprint. Its low gate charge enhances switching efficiency, reducing power losses during operation. The extended temperature range and reliable packaging improve durability in industrial and automotive environments, making it a superior choice for engineers prioritizing efficiency, thermal reliability, and integration ease in power management circuits.
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Typical Applications
- Power management circuits in automotive electronics, where reliable switching and thermal stability are essential for system safety and performance.
- Load switching and control in industrial automation systems requiring efficient and compact semiconductor solutions.
- Battery protection and management in portable devices, leveraging the device??s low on-resistance and efficient gate drive.
- DC/DC converters and voltage regulators within embedded systems demanding robust and stable MOSFET performance.
HT1MOA4S30/E/3J Brand Info
The HT1MOA4S30/E/3J is a product from a leading semiconductor manufacturer known for its innovative power management solutions. This device reflects the brand??s commitment to delivering high-quality, reliable MOSFETs tailored for industrial and automotive markets. The product line focuses on combining advanced electrical properties with practical packaging to meet evolving design challenges, enabling engineers to optimize system efficiency and durability with confidence.
FAQ
What is the maximum voltage this device can handle?
This component supports a maximum drain-source voltage of 30 volts, making it suitable for applications requiring moderate voltage operation, such as automotive power supplies and industrial control circuits.
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How does the low on-resistance benefit system performance?
Lower on-resistance reduces conduction losses during operation, which translates to improved energy efficiency and reduced heat generation. This enhances thermal reliability and extends the device lifecycle in demanding applications.
Can this device operate at high temperatures?
Yes, it is rated for operation up to 150??C, enabling use in environments where elevated temperatures are common, such as automotive engine compartments or industrial machinery.
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What package does this MOSFET come in and why is it important?
The device is available in a SOT-23 surface-mount package, which is compact and helps save PCB space. This packaging also supports effective thermal dissipation, crucial for maintaining device stability under load.
Is this device suitable for switching applications?
Absolutely. The low gate charge and moderate current rating make it well-suited for switching applications, including DC/DC converters and load control, where efficient and fast switching is necessary.
