HSMS-C120 Schottky Diode Detector | High-Speed Switching | Surface Mount Package

  • High-speed switching diodes provide fast response times, improving signal integrity in high-frequency circuits.
  • The HSMS-C120 features low forward voltage drop, enhancing efficiency by minimizing power loss during operation.
  • Its compact SOD-323 package saves board space, enabling denser circuit designs in constrained environments.
  • Commonly used in RF detection and mixer circuits, it supports accurate signal processing in communication devices.
  • Designed for consistent performance over time, it ensures reliable operation under typical electronic stress conditions.
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HSMS-C120 Overview

The HSMS-C120 is a high-performance surface-mount Schottky diode designed for fast switching and low forward voltage drop applications. Its compact DO-35 package and robust electrical characteristics make it ideal for use in high-frequency circuits, where efficiency and reliability are critical. With a low junction capacitance and high surge capability, this diode supports enhanced signal integrity and reduced power loss in RF and microwave systems. Engineers and sourcing specialists value its stable performance across temperature variations, making it a dependable choice in industrial and communications equipment. For detailed information, visit IC Manufacturer.

HSMS-C120 Technical Specifications

ParameterSpecification
Maximum Reverse Voltage (VR)15 V
Forward Current (IF)30 mA
Peak Forward Surge Current (IFSM)2 A (non-repetitive)
Forward Voltage (VF) at 1 mA0.34 V (typical)
Junction Capacitance (CJ)1.5 pF (typical)
Reverse Current (IR) at VR = 15 V0.5 nA (typical)
Operating Temperature Range-65??C to +125??C
Package TypeSurface-mount DO-35

HSMS-C120 Key Features

  • Low forward voltage drop: Minimizes power loss and heat generation, improving overall circuit efficiency in high-frequency signal paths.
  • High-speed switching: Enables rapid response times essential for RF applications, reducing signal distortion and improving fidelity.
  • Low junction capacitance: Supports superior performance in microwave and RF circuits by maintaining signal integrity at high frequencies.
  • Wide operating temperature range: Ensures reliable operation in harsh industrial environments, extending device service life.

HSMS-C120 Advantages vs Typical Alternatives

This diode offers a combination of low forward voltage and minimal junction capacitance, outperforming typical silicon diodes in RF and microwave applications. Its fast switching speed and low leakage current provide enhanced efficiency and precision, which are critical for sensitive signal processing. Compared to standard rectifier diodes, it delivers superior reliability and thermal stability, making it ideal for demanding industrial and communication systems.

Typical Applications

  • High-frequency mixers and detectors in RF communication equipment, enabling efficient signal conversion and low-noise operation with minimal distortion.
  • Voltage clamping and protection circuits where fast response and low forward voltage are essential to safeguard sensitive components.
  • Low-level switching in microwave oscillators and amplifiers, enhancing speed and reducing signal loss for better system performance.
  • High-speed logic circuits requiring compact, reliable diode solutions with stable electrical characteristics across temperature variations.

HSMS-C120 Brand Info

The HSMS-C120 is a well-established Schottky diode product designed for surface-mount applications by a reputable semiconductor manufacturer. Its focus on high-frequency efficiency and reliability makes it a preferred choice among engineers for RF and microwave circuit designs. This device reflects the brand??s commitment to delivering durable, high-quality components tailored to meet the rigorous demands of industrial and communication markets.

FAQ

What is the maximum reverse voltage rating of this diode?

The device supports a maximum reverse voltage of 15 volts, making it suitable for low-voltage protection and signal rectification in RF circuits without the risk of breakdown under normal operating conditions.

How does the low junction capacitance benefit RF applications?

Low junction capacitance reduces the parasitic effects that can distort high-frequency signals. This characteristic helps maintain signal integrity and improves the performance of mixers, detectors, and amplifiers operating at microwave frequencies.

What is the typical forward voltage drop at operating current?

At a forward current of 1 mA, the diode exhibits a typical forward voltage drop of approximately 0.34 volts. This low forward voltage contributes to reduced power dissipation and enhanced efficiency in switching applications.

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Can this diode operate reliably in harsh temperature environments?

Yes, it is rated for operation from -65??C up to +125??C, allowing it to function reliably in extreme industrial settings and automotive environments where temperature fluctuations are common.

What packaging type does the diode use for surface mounting?

The device is supplied in a compact DO-35 surface-mount package, which facilitates easy integration into automated assembly lines and supports high-density circuit board layouts.

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