HMC646LP2E Overview
The HMC646LP2E is a high-performance, low-noise amplifier designed for RF and microwave applications. Featuring a wide frequency range and excellent gain flatness, it delivers low noise figure and high linearity, making it ideal for sensitive signal amplification in demanding environments. The device is optimized for integration in compact systems requiring consistent performance over temperature and frequency variations. Its robust design supports both commercial and industrial-grade applications, ensuring reliability and stable operation. For detailed technical information and purchasing options, visit IC Manufacturer.
HMC646LP2E Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 0.5 to 6.0 GHz |
| Gain | 14 dB (typical) |
| Noise Figure | 1.9 dB (typical) |
| Output IP3 (Third-Order Intercept Point) | 27 dBm (typical) |
| Supply Voltage | +5 V |
| Supply Current | 95 mA (typical) |
| Input/Output Return Loss | ??10 dB (typical) |
| Package Type | 4×4 mm, 16-lead LFCSP |
| Operating Temperature Range | -40??C to +85??C |
HMC646LP2E Key Features
- Wide Frequency Coverage: Supports 0.5 to 6.0 GHz operation, enabling flexible use in diverse RF systems.
- Low Noise Figure: Provides a low 1.9 dB noise figure to enhance signal clarity in sensitive receiver front-ends.
- High Linearity: With an output IP3 of 27 dBm, it reduces signal distortion, preserving signal integrity.
- Compact LFCSP Package: The 4×4 mm footprint simplifies integration into space-constrained designs.
- Stable Performance Over Temperature: Guaranteed operation from -40??C to +85??C ensures reliability in harsh environments.
- Low Current Consumption: Draws only 95 mA typical supply current, balancing performance with efficient power usage.
HMC646LP2E Advantages vs Typical Alternatives
This amplifier offers a superior combination of low noise figure and high linearity, outperforming many standard RF amplifiers in sensitivity and signal fidelity. Its broad frequency range and compact packaging allow for flexible system design with reduced board space. Compared to typical alternatives, it provides enhanced reliability across wide temperature ranges and maintains consistent gain and return loss, making it an attractive choice for precision industrial and communication applications.
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Typical Applications
- Wireless communication systems requiring low noise amplification across multiple frequency bands to improve receiver sensitivity and overall system performance.
- Radar and electronic warfare equipment where high linearity and low distortion are critical for accurate signal processing.
- Test and measurement instrumentation that demands stable gain and noise performance in compact form factors.
- Satellite and space communication systems benefiting from robust operation over wide temperature ranges and compact integration.
HMC646LP2E Brand Info
The HMC646LP2E is a product from a leading semiconductor manufacturer specializing in high-frequency integrated circuits. Designed with cutting-edge GaAs technology, this amplifier reflects the brand??s commitment to delivering exceptional RF performance and reliability. Its extensive characterization and quality control ensure suitability for mission-critical industrial and defense applications. The product is supported by comprehensive documentation and technical resources to assist engineers in seamless integration.
FAQ
What is the typical gain provided by this RF amplifier?
The amplifier typically delivers 14 dB of gain across its operating frequency range, providing sufficient signal amplification for a variety of RF front-end applications.
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What frequency range does the device support?
This device operates from 0.5 GHz up to 6.0 GHz, covering a broad spectrum suitable for many wireless communication and radar systems.
How does the noise figure impact system performance?
A low noise figure of approximately 1.9 dB minimizes additional noise introduced by the amplifier, thereby improving the sensitivity and signal-to-noise ratio of the overall system.





