HMC641ATCPZ-EP-PT 6 GHz Frequency Mixer, MMIC, 4-Pin Leadless Package

  • This device functions as a low noise amplifier, improving signal clarity and system sensitivity in RF applications.
  • It operates over a wide frequency range, enabling versatile use across multiple communication bands.
  • The compact LFCSP package reduces board space, simplifying integration into dense circuit layouts.
  • Ideal for wireless infrastructure, it enhances signal reception in base stations and repeater systems.
  • Manufactured to meet stringent quality standards, ensuring consistent performance and long-term reliability.
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HMC641ATCPZ-EP-PT Overview

The HMC641ATCPZ-EP-PT is a high-performance, low noise figure GaAs MMIC distributed amplifier designed for broadband RF and microwave applications. Operating from DC to 6 GHz, this device offers excellent gain, linearity, and noise performance, making it suitable for demanding communication, radar, and instrumentation systems. Packaged in a compact 4×4 mm leadless SMT package, it supports surface-mount assembly for space- and cost-efficient designs. The device??s robust design ensures consistent operation over temperature and voltage variations, providing engineers with a reliable solution for sensitive signal amplification tasks. For more information, visit IC Manufacturer.

HMC641ATCPZ-EP-PT Technical Specifications

ParameterSpecificationUnits
Frequency RangeDC to 6GHz
Gain13.5dB
Noise Figure3.8dB
Output Power at 1 dB Compression (P1dB)18dBm
Input Return Loss15dB
Output Return Loss15dB
Supply Voltage5V
Supply Current150mA
Operating Temperature Range-40 to +85??C
Package Type4×4 mm Leadless SMT?C

HMC641ATCPZ-EP-PT Key Features

  • Wideband Frequency Coverage: Operates from DC to 6 GHz, enabling use across multiple RF and microwave bands without requiring multiple devices.
  • Low Noise Figure: Provides a noise figure as low as 3.8 dB, improving system sensitivity and signal-to-noise ratio in receiver front ends.
  • High Gain and Linearity: Delivers 13.5 dB gain with an output power of 18 dBm at 1 dB compression point, ideal for maintaining signal integrity in amplification stages.
  • Compact Surface-Mount Packaging: The 4×4 mm leadless SMT package ensures easy integration into space-constrained PCB layouts and supports automated assembly processes.
  • Robust Operating Temperature Range: Supports operation from -40??C to +85??C, ensuring reliable performance in harsh industrial and aerospace environments.

HMC641ATCPZ-EP-PT Advantages vs Typical Alternatives

This amplifier stands out with its broad frequency range, low noise figure, and high linearity compared to typical broadband amplifiers. Its integration in a compact leadless SMT package improves thermal management and assembly efficiency. The device’s consistent gain and output power across the specified bandwidth provide enhanced signal fidelity and system sensitivity, offering a competitive edge in demanding RF applications.

Typical Applications

  • Wideband communication systems: Ideal for use in broadband transceiver front ends requiring low noise and high linearity amplification across multiple frequencies.
  • Radar systems: Supports signal amplification in radar receiver chains where sensitivity and signal integrity are critical.
  • Test and measurement equipment: Provides stable gain and low noise for sensitive instrumentation amplifiers operating over a wide frequency range.
  • Electronic warfare and defense systems: Suitable for integration in compact, ruggedized RF modules needing consistent performance under temperature extremes.

HMC641ATCPZ-EP-PT Brand Info

The HMC641ATCPZ-EP-PT is part of a family of high-performance GaAs MMIC amplifiers designed by a leading semiconductor provider specializing in RF and microwave components. This product

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