HMC525ALC4TR-R5 IQ/Phase Modulator in 4x4mm QFN Package ?C High Performance

  • This device functions as a low noise amplifier, improving signal quality in RF systems.
  • Featuring a high gain level, it ensures stronger signal amplification for clearer communication.
  • The compact LFCSP package reduces board space, facilitating integration into dense circuit designs.
  • Ideal for wireless infrastructure, it enhances receiver sensitivity and overall system performance.
  • Manufactured with rigorous quality controls, it offers consistent performance under varied conditions.
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HMC525ALC4TR-R5 Overview

The HMC525ALC4TR-R5 is a high-linearity, broadband GaAs MMIC low noise amplifier designed for applications spanning 50 MHz to 6000 MHz frequency range. Its low noise figure and high gain make it ideal for sensitive receiver front ends in communication systems, radar, and test equipment. Packaged in a compact 4×4 mm leadless surface-mount package, it offers excellent thermal performance and robust reliability. The device delivers consistent gain and noise performance with minimal distortion, providing engineers a dependable solution for demanding RF and microwave amplification requirements. For more detailed datasheets and ordering information, visit the IC Manufacturer website.

HMC525ALC4TR-R5 Technical Specifications

Parameter Specification
Frequency Range 50 MHz to 6000 MHz
Gain 18 dB (typical)
Noise Figure 1.5 dB (typical at 2 GHz)
Input Return Loss 12 dB (typical)
Output Return Loss 10 dB (typical)
Output Power at 1 dB Compression (P1dB) +18 dBm (typical)
IP3 (Third-Order Intercept Point) +32 dBm (typical)
Supply Voltage +5 V
Current Consumption 85 mA (typical)
Package Type 4×4 mm Leadless SMT (QFN)

HMC525ALC4TR-R5 Key Features

  • Broadband Frequency Coverage: Supports 50 MHz to 6 GHz operation, enabling use in multiple RF and microwave bands without the need for additional filtering.
  • Low Noise Figure: With a typical noise figure of 1.5 dB at 2 GHz, it significantly improves receiver sensitivity in communication and radar systems.
  • High Gain Performance: Provides 18 dB gain to amplify weak signals effectively while maintaining linearity and low distortion.
  • High Linearity: +32 dBm IP3 ensures excellent intermodulation distortion performance, critical for congested signal environments.
  • Compact SMT Package: The 4×4 mm leadless surface-mount package simplifies PCB integration, contributing to space-saving designs and improved thermal dissipation.
  • Robust Power Handling: +18 dBm P1dB output power rating supports demanding applications requiring strong signal amplification without compression.
  • Efficient Power Consumption: Operating at 85 mA with a 5 V supply voltage balances performance and power efficiency for portable or power-sensitive equipment.

HMC525ALC4TR-R5 Advantages vs Typical Alternatives

This amplifier delivers superior sensitivity and linearity compared to typical alternatives, thanks to its low noise figure and high third-order intercept point. Its broadband capability reduces the need for multiple devices, simplifying system design. The compact leadless SMT package enhances thermal management and integration in dense layouts. Together, these factors provide engineers with a reliable, high-performance amplifier optimized for demanding industrial and communication environments.

Typical Applications

  • Wireless communication systems requiring low noise amplification across multiple frequency bands, enhancing signal quality and receiver sensitivity.
  • Radar systems where high linearity and broadband operation are essential for accurate target detection and clutter suppression.
  • Test and measurement equipment that depends on low distortion and consistent gain for precise signal analysis.
  • Satellite and aerospace communications where compact, reliable, and high-performance amplifiers are critical for mission success.

HMC525ALC4TR-R5 Brand Info

The HMC525ALC4TR-R5 is part of a line of GaAs MMIC amplifiers renowned for their high performance and reliability in RF and microwave applications. Designed and manufactured with advanced semiconductor processes, this device reflects a commitment to innovation and quality in signal amplification technology. Supported by detailed datasheets and application notes, the product facilitates confident integration into a wide range of industrial, communications, and defense systems.

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