HMC427ALP3E Double-Balanced Mixer IC in 4x4mm QFN Package

HMC427ALP3E Overview

The HMC427ALP3E is a high-performance, low-noise, MMIC low noise amplifier (LNA) designed specifically for operation in the 6 to 18 GHz frequency range. This compact, surface-mount device offers exceptional gain and noise figure performance, making it ideal for sensitive RF and microwave front-end applications. With integrated biasing and a robust GaAs pHEMT technology, the amplifier ensures enhanced linearity and reliability in demanding industrial and communication systems. Engineers and sourcing specialists will appreciate its small footprint and ease of integration in complex RF chains. Explore more from IC Manufacturer for detailed product support and datasheets.

HMC427ALP3E Technical Specifications

HMC427ALP3E Key Features

• Wideband operation: Covers 6 to 18 GHz, enabling versatile use across multiple RF and microwave bands.
• Low noise figure: Provides minimal signal degradation, critical for improving receiver sensitivity in communication systems.
• High gain: Approximately 14 dB gain enhances weak signal amplification with low distortion.
• Compact surface-mount package: Small 3 x 3 mm footprint allows for integration in space-constrained designs.
• Single supply operation: Simplifies power management and reduces system complexity.
• Robust GaAs pHEMT technology: Ensures stable performance and reliability in harsh industrial environments.
• Integrated bias circuitry: Eliminates external bias components, reducing BOM and design effort.

HMC427ALP3E Advantages vs Typical Alternatives

This amplifier offers a superior combination of gain and low noise figure across a wide frequency range, outperforming many standard LNAs in sensitivity and linearity. Its integrated bias design and small surface-mount package simplify system integration and reduce PCB space, making it more efficient than discrete solutions. The GaAs pHEMT process technology ensures reliable operation under demanding conditions, providing enhanced durability compared to silicon-based alternatives.

Typical Applications

• Radar and electronic warfare systems requiring wideband low-noise amplification and high linearity to detect and process faint signals over broad frequency ranges.
• Satellite communications front-ends needing low noise and high gain to ensure signal integrity from weak satellite transmissions.
• Test and measurement equipment for RF signal amplification within the 6 to 18 GHz bands to achieve accurate and stable test results.
• Microwave radio links where reliable, low-noise gain supports long-distance, high-frequency wireless communication.

HMC427ALP3E Brand Info

The HMC427ALP3E is part of a family of RF and microwave components produced using GaAs pHEMT technology, targeting demanding industrial, aerospace, and defense applications. Known for its high performance in amplification and low noise figures, the brand focuses on delivering robust, reliable semiconductor solutions that meet rigorous system requirements. This product exemplifies the company’s commitment to innovation, quality, and support for RF system designers worldwide.

FAQ

What is the typical noise figure for this amplifier across its operating band?

The typical noise figure is approximately 2.5 dB at mid-band frequencies. This low noise characteristic ensures minimal degradation to the signal-to-noise