HMC339-SX Overview
The HMC339-SX is a high-performance, ultra-low noise amplifier designed to operate across a wide frequency range from 0.1 to 12 GHz. It delivers exceptional gain with low noise figure, making it ideal for sensitive RF front-end applications. This device supports a single positive supply voltage and features a high input third-order intercept point (IP3), ensuring linearity in demanding signal environments. Compact and robust, the HMC339-SX is suitable for integration in complex communication and radar systems requiring reliable amplification with minimal distortion. For detailed sourcing and technical support, visit IC Manufacturer.
HMC339-SX Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 0.1 to 12 GHz |
| Gain | 22 dB (typical) |
| Noise Figure | 1.4 dB (typical at 2 GHz) |
| Input Third-Order Intercept Point (IP3) | 27 dBm (typical) |
| Supply Voltage | +5 V Single Supply |
| Supply Current | 80 mA (typical) |
| Operating Temperature Range | -40??C to +85??C |
| Package Type | 4×4 mm QFN |
HMC339-SX Key Features
- Wideband Amplification: Covers 0.1 to 12 GHz, enabling versatile use across multiple RF bands, reducing the need for multiple devices.
- Low Noise Figure: At just 1.4 dB, it enhances signal sensitivity, crucial for weak signal detection in radar and communication systems.
- High Linearity: The 27 dBm input IP3 improves distortion performance, maintaining signal integrity in environments with strong interferers.
- Single Supply Operation: Simplifies power design by operating on a +5 V supply, facilitating easier integration into existing systems.
- Compact Package: The 4×4 mm QFN package supports high-density PCB layouts while ensuring reliable thermal performance.
HMC339-SX Advantages vs Typical Alternatives
This amplifier offers superior gain and noise figure performance within a broad frequency range compared to typical alternatives. Its high input IP3 ensures excellent linearity, reducing signal distortion in complex RF environments. The single +5 V supply simplifies power management and lowers system complexity. Additionally, the compact QFN package supports efficient thermal management and space-saving PCB designs, making it ideal for high-reliability industrial and defense applications.
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Typical Applications
- RF front-end amplification in radar systems requiring wide frequency coverage and low noise for accurate target detection and tracking.
- Wireless communication infrastructure, including base stations and repeaters, benefiting from high gain and linearity to maintain signal quality.
- Test and measurement equipment where precise amplification with minimal distortion is critical over a broad frequency range.
- Instrumentation and defense electronics that demand robust performance in harsh environments with challenging signal conditions.
HMC339-SX Brand Info
The HMC339-SX is part of a specialized amplifier series designed and manufactured by a leading semiconductor provider known for high-frequency RF solutions. This product leverages advanced GaAs pHEMT technology to deliver low noise and high linearity across an extensive frequency range. It is engineered for demanding applications in telecommunications, defense, and instrumentation markets, reflecting the brand??s commitment to innovation, reliability, and precision in RF component manufacturing.
FAQ
What frequency range does the HMC339-SX cover?
The device operates over a wide frequency range from 0.1 GHz up to 12 GHz, making it suitable for multiple RF applications including radar, communication, and instrumentation systems.
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What is the typical noise figure of this amplifier?
The HMC339-SX provides a low noise figure of approximately 1.4 dB at 2 GHz, which helps improve signal sensitivity and overall system performance in low-signal environments.
How does the input IP3 impact system performance?
A high input third-order intercept point (IP3) of 27 dBm indicates excellent linearity. This reduces intermodulation distortion when strong signals are present, ensuring clearer signal amplification.
