HMC329ALC3BTR-R5 Overview
The HMC329ALC3BTR-R5 is a high-performance low noise amplifier (LNA) designed for operation in the 0.1 to 6.0 GHz frequency range. This device delivers excellent gain and ultra-low noise figure, making it ideal for sensitive RF front-end applications requiring improved signal clarity and enhanced system sensitivity. Packaged in a compact 3×3 mm QFN form factor, it supports integration into space-constrained designs without sacrificing performance. The amplifier features a robust input IP3, low current consumption, and is well-suited for demanding industrial, communications, and defense applications. For more detailed product insights, visit IC Manufacturer.
HMC329ALC3BTR-R5 Technical Specifications
Parameter | Specification |
---|---|
Frequency Range | 0.1 to 6.0 GHz |
Gain | 18 dB (typical) |
Noise Figure | 1.1 dB (typical at 2 GHz) |
Input IP3 | +28 dBm (typical) |
Supply Voltage | +5 V |
Current Consumption | 75 mA (typical) |
Package Type | 3×3 mm QFN |
Operating Temperature Range | -40??C to +85??C |
HMC329ALC3BTR-R5 Key Features
- Wideband Frequency Coverage: Supports 0.1 to 6.0 GHz, allowing flexible use across multiple RF systems and reducing the need for multiple amplifiers.
- High Gain with Low Noise Figure: Provides 18 dB gain while maintaining a noise figure as low as 1.1 dB, enhancing signal quality and system sensitivity.
- Robust Linearity: With an input IP3 of +28 dBm, the amplifier ensures superior linearity for handling strong signals without distortion.
- Compact QFN Package: The 3×3 mm footprint enables easy integration into space-constrained designs, facilitating miniaturization of RF front-end modules.
- Low Power Consumption: Operates at 75 mA typical current, balancing performance with energy efficiency in battery-powered and portable systems.
- Wide Operating Temperature Range: Reliable performance from -40??C to +85??C ensures stable operation in harsh industrial and outdoor environments.
HMC329ALC3BTR-R5 Advantages vs Typical Alternatives
This amplifier offers an exceptional combination of low noise figure and high gain across a broad frequency range, which many typical LNAs cannot match simultaneously. Its superior input IP3 enhances signal linearity, reducing distortion in congested RF environments. The compact QFN package supports high-density PCB layouts, while its low current consumption optimizes power efficiency. These characteristics make it more reliable and suitable than standard alternatives for applications demanding both sensitivity and integration efficiency.
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Typical Applications
- Wireless communication systems requiring low noise amplification in receiver front-ends to improve signal-to-noise ratio and extend coverage range.
- Radar and electronic warfare systems that benefit from the amplifier??s wide frequency range and high linearity for accurate signal detection and processing.
- Test and measurement equipment demanding precise signal amplification with minimal noise contribution over broad bandwidths.
- Industrial automation and instrumentation where robust performance and temperature resilience are critical for reliable operation.
HMC329ALC3BTR-R5 Brand Info
The HMC329ALC3BTR-R5 is produced by a leading manufacturer specializing in high-frequency semiconductor components designed for demanding RF and microwave applications. This product exemplifies the company??s commitment to delivering cutting-edge low noise amplifiers that combine performance, reliability, and compact form factors. Its design leverages advanced GaAs pHEMT technology to meet stringent industry standards, ensuring engineers and sourcing specialists can trust the device for critical system builds.
FAQ
What frequency range is supported by this low noise amplifier?
The amplifier covers a wide frequency range from 0.1 GHz up to 6.0 GHz, enabling its use in diverse RF applications including cellular, radar, and wireless communication systems.
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