The HMC322ALP4E is a high-performance GaAs MMIC MMIC Low Noise Amplifier (LNA) designed for microwave and RF applications covering a frequency range from 6 to 18 GHz. It offers a low noise figure and high gain, making it ideal for signal amplification in demanding environments. The device features a compact 4-lead plastic package suitable for surface-mount technology, enabling easy integration into densely packed circuits. Optimized for linearity and low power consumption, this amplifier supports wideband communication systems, radar, and instrumentation. For more detailed technical support and purchasing information, visit IC Manufacturer.
HMC322ALP4E Technical Specifications
Parameter
Specification
Unit
Frequency Range
6 ?C 18
GHz
Noise Figure
3.3
dB (typical at 12 GHz)
Gain
17.5
dB (typical at 12 GHz)
Input Return Loss
-10
dB (typical)
Output Return Loss
-10
dB (typical)
Input Power for 1 dB Compression
+5
dBm
Supply Voltage
+5
V
Supply Current
43
mA (typical)
Package
4-lead Plastic Surface Mount
–
Operating Temperature Range
-40 to +85
??C
HMC322ALP4E Key Features
Wide Frequency Coverage: Supports 6 to 18 GHz operation, enabling broad RF and microwave applications with consistent performance.
Low Noise Figure: Typical noise figure of 3.3 dB helps maintain signal integrity and improves system sensitivity in communication and radar systems.
High Gain: Offers a typical gain of 17.5 dB, providing significant signal amplification for weak input signals.
Compact Surface-Mount Package: The 4-lead plastic package facilitates easy PCB integration while minimizing board space usage.
Low Power Consumption: Operates at 5 V with only 43 mA typical current, ideal for power-sensitive applications.
Robust Linearity: Input power compression point at +5 dBm ensures reliable performance under high signal levels.
Wide Operating Temperature: Supports -40 to +85 ??C, suitable for industrial and commercial environments.
HMC322ALP4E Advantages vs Typical Alternatives
This amplifier distinguishes itself with a balanced combination of low noise figure and high gain across a broad frequency range up to 18 GHz. Compared to typical LNAs, it delivers superior linearity and low power consumption, enhancing system efficiency and reliability. Its compact surface-mount format simplifies integration, making it an excellent choice for space-constrained designs requiring consistent, high-performance RF amplification.
Wideband communication systems requiring low-noise amplification from 6 to 18 GHz, such as satellite, microwave radio, and point-to-point links, benefit from this device??s wide frequency coverage and low noise figure.
Radar front-end modules leverage the high gain and linearity for accurate target detection and signal processing.
Test and measurement equipment utilize the device for precise signal amplification in microwave instrumentation.
Industrial RF systems demanding robust temperature operation and compact packaging find this amplifier an ideal component.
HMC322ALP4E Brand Info
The HMC322ALP4E is part of a product line known for delivering reliable, high-frequency performance in demanding RF and microwave applications. Manufactured with advanced GaAs MMIC technology, this amplifier meets stringent quality standards to ensure consistent operation in industrial and commercial environments. The product??s design emphasizes integration flexibility and electrical performance, supporting engineers and sourcing specialists in developing efficient and compact RF front-end solutions.