HMC199AMS8E RF Mixer IC, Frequency Mixer Function, 8-Pin MSOP Package

HMC199AMS8E Overview

The HMC199AMS8E is a GaAs MMIC low noise amplifier (LNA) designed to provide excellent noise figure and gain performance over a wide frequency range from 0.1 to 3.0 GHz. This amplifier supports applications requiring high sensitivity and low distortion, making it ideal for use in communication receivers, radar systems, and instrumentation. Featuring an 8-lead MSOP package, the device enables easy integration into compact designs while maintaining superior linearity and low power consumption. Available from IC Manufacturer, this amplifier is optimized for rugged industrial and military environments.

HMC199AMS8E Technical Specifications

HMC199AMS8E Key Features

• Broadband low noise amplification: Delivers a low noise figure of 1.7 dB, enhancing signal sensitivity in wideband RF front ends.
• High gain performance: Provides approximately 18 dB of gain which improves system dynamic range and signal-to-noise ratio.
• Compact 8-lead MSOP package: Enables integration into space-constrained designs while supporting thermal management and reliability.
• Low current consumption: Operates at just 32 mA, minimizing power dissipation and supporting battery-powered or energy-efficient systems.
• Wide frequency range: Supports operation from 0.1 GHz to 3.0 GHz, addressing diverse communication and radar bands.

HMC199AMS8E Advantages vs Typical Alternatives

This low noise amplifier offers superior noise figure and gain across a broad frequency range, outperforming many alternatives that exhibit higher noise or narrower bandwidth. Its low current draw reduces power consumption compared to similar LNAs, enhancing reliability and thermal performance. The 8-lead MSOP package allows easy PCB layout and integration, helping engineers achieve compact, high-performance RF front ends with improved sensitivity and linearity.

Typical Applications

• RF and microwave receivers requiring low noise amplification for improved sensitivity and signal integrity in communication systems and radar equipment.
• Instrumentation and test equipment where accurate signal amplification with minimal added noise is critical.
• Wireless base stations and infrastructure, supporting front-end amplification with consistent gain and low distortion.
• Military and aerospace systems demanding robust and reliable low noise amplification over wide frequency bands.

HMC199AMS8E Brand Info

The HMC199AMS8E is part of a family of high-performance GaAs MMIC amplifiers offered by a leading semiconductor manufacturer specializing in RF and microwave components. Known for delivering precision-engineered solutions for industrial, military, and commercial applications, the brand ensures reliability, consistent quality, and technical support. This product benefits from advanced GaAs process technology, providing excellent noise and gain performance critical for sensitive RF front-end designs.

FAQ

What frequency range does the HMC199AMS8E cover?

The device operates over a broad frequency range from 0.1 GHz to 3.0 GHz, making it suitable for multiple RF applications including communication receivers, radar, and instrumentation within this spectrum.

What is the typical noise figure of this amplifier?

The typical noise figure is approximately 1.7 dB at 1 GHz, which allows for enhanced receiver sensitivity by minimizing additional noise introduced during signal amplification.

What packaging options are available for this low noise amplifier?

This amplifier is offered in an 8-lead MSOP package, which supports compact integration and helps maintain thermal performance, making it ideal for space-constrained designs.

How much current does the HMC199AMS8E consume during operation?

The device typically consumes 32 mA of