HMC197BE Overview
The HMC197BE is a high-performance, monolithic microwave integrated circuit (MMIC) designed for low noise amplification in demanding RF and microwave applications. Operating over a wide frequency range, this low noise amplifier (LNA) delivers excellent gain and noise figure characteristics, making it ideal for sensitive receiver front-ends. Its robust GaAs pHEMT process ensures consistent performance with high linearity and low current consumption. The device??s compact surface-mount package facilitates easy integration into complex systems. For engineers and sourcing specialists requiring reliable, precision amplification components, the HMC197BE offers an optimal balance of noise performance, gain, and power efficiency. Learn more at IC Manufacturer.
HMC197BE Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 0.01 to 6.0 GHz |
| Small Signal Gain | 17 dB (typical) |
| Noise Figure | 1.3 dB (typical at 2 GHz) |
| Input Return Loss | 14 dB (typical) |
| Output Return Loss | 15 dB (typical) |
| Output 1 dB Compression Point (P1dB) | +10 dBm (typical) |
| Supply Voltage | +5 V |
| Supply Current | 55 mA (typical) |
| Package Type | Surface-mount 4×4 mm QFN |
HMC197BE Key Features
- Wide Frequency Coverage: Supports operation from 10 MHz to 6 GHz, providing versatility for multiple RF and microwave systems.
- Low Noise Figure: Offers a typical noise figure of 1.3 dB at 2 GHz, enhancing receiver sensitivity and improving overall system performance.
- High Gain: Provides approximately 17 dB gain to amplify weak input signals effectively with minimal signal distortion.
- Compact Surface-Mount Package: The 4×4 mm QFN package allows for space-saving PCB layouts and straightforward assembly in high-density designs.
- Low Power Consumption: Draws only 55 mA at 5 V supply, optimizing energy efficiency in battery-powered or low-power applications.
- Robust GaAs pHEMT Technology: Ensures high linearity and stability across the frequency range, critical for demanding industrial and communication environments.
- Input and Output Matching: Well-matched input and output return loss (>14 dB) reduce signal reflections and improve impedance matching for better system integration.
HMC197BE Advantages vs Typical Alternatives
This device excels in delivering low noise amplification with superior gain and linearity compared to standard LNAs. Its wide frequency range and low power consumption make it an efficient choice for applications requiring sensitive signal reception without compromising reliability. The integrated matching and compact QFN package simplify system design and reduce component count, providing a clear advantage over discrete or bulkier alternatives.
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Typical Applications
- Wireless communication systems where low noise figure and high gain improve receiver sensitivity and signal quality across multiple bands.
- Radar and electronic warfare systems requiring wide bandwidth and robust performance in harsh environments.
- Test and measurement equipment benefiting from low distortion and stable gain over a broad frequency range.
- Satellite communication receivers that demand compact, energy-efficient low noise amplifiers with consistent performance.
HMC197BE Brand Info
The HMC197BE is part of a family of high-performance MMIC amplifiers produced by a leading manufacturer specializing in GaAs pHEMT technology. This product line emphasizes precision RF components designed for industrial, defense, and commercial applications. The HMC197BE reflects the brand??s commitment to delivering reliable, efficient, and high-quality semiconductor solutions tailored for demanding microwave system requirements.
FAQ
What frequency range does the HMC197BE support?
The amplifier operates over a broad frequency range from 10 MHz up to 6 GHz, making it suitable for a wide variety of RF and microwave applications including communications, radar, and test equipment.
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What is the typical noise figure of this low noise amplifier?
The device typically




