HB03P002PZ1 Overview
The HB03P002PZ1 is a high-performance semiconductor device designed for precision industrial applications requiring reliable switching and efficient power management. With its robust construction and optimized electrical characteristics, this component ensures consistent operation in demanding environments. Its compact package supports seamless integration into complex systems, making it an ideal choice for engineers and sourcing specialists focused on quality and durability. Available from IC Manufacturer, this product meets stringent industry standards and delivers excellent performance in control circuits and power regulation tasks.
HB03P002PZ1 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 2 A |
| Gate Threshold Voltage (VGS(th)) | 1.5 ?C 2.5 V |
| On-Resistance (RDS(on)) | ?? 50 m?? @ VGS = 4.5 V |
| Power Dissipation (PD) | 1.25 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | Surface-Mount SOT-23 |
| Maximum Gate Charge (Qg) | 5 nC |
HB03P002PZ1 Key Features
- Low On-Resistance: Ensures minimal power loss and improved efficiency in switching applications.
- High Drain Current Capability: Supports up to 2 A continuous current, enabling robust handling of load demands.
- Wide Operating Temperature Range: Suitable for harsh industrial environments, maintaining performance from -55??C to +150??C.
- Compact SOT-23 Package: Facilitates easy PCB integration with space-saving design, enhancing system density.
- Fast Switching Speed: Low gate charge enables rapid switching, critical for high-frequency power management circuits.
HB03P002PZ1 Advantages vs Typical Alternatives
This device offers superior switching efficiency due to its low on-resistance and fast gate charge characteristics compared to typical MOSFETs in the same voltage class. Its compact SOT-23 package ensures easier integration and better thermal performance, while the wide temperature rating provides enhanced reliability in industrial conditions. These factors collectively improve system accuracy and power handling, making it a preferred choice for precision applications.
🔥 Best-Selling Products
Typical Applications
- DC-DC converters and power regulation circuits requiring efficient switching and stable operation under varying loads and temperatures.
- Load switching in industrial control systems where compact size and reliable current handling are essential.
- Battery management systems for portable and stationary devices demanding low power loss and thermal stability.
- General-purpose switching applications in consumer electronics and embedded systems with space constraints.
HB03P002PZ1 Brand Info
The HB03P002PZ1 is part of the IC Manufacturer??s portfolio of reliable power MOSFETs designed for industrial and commercial electronics. This product line emphasizes high quality, consistent performance, and adherence to international standards. With a focus on innovation and customer support, the brand ensures that engineers receive components that meet rigorous specifications and facilitate efficient design cycles.
FAQ
What is the maximum voltage rating of the HB03P002PZ1?
The device has a maximum drain-source voltage rating of 30 V, making it suitable for low-voltage power switching and regulation tasks typically found in industrial and consumer electronics.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Can this MOSFET operate reliably in high-temperature environments?
Yes, it supports an operating temperature range from -55??C up to +150??C, allowing it to maintain performance and reliability in demanding industrial conditions.