FM25L04B-G 4Mb SPI FRAM Memory Module ?C Non-Volatile Storage, SOIC-8 Package

FM25L04B-G Overview

The FM25L04B-G is a high-performance serial ferroelectric RAM (F-RAM) device designed for industrial and commercial applications requiring fast, non-volatile memory with high endurance. Featuring a 4 Mbit storage capacity and SPI interface, it offers ultra-low power consumption and rapid write speeds, making it ideal for data logging, real-time data storage, and energy-efficient systems. Its robust design ensures data integrity and reliability even in harsh environments. For sourcing and engineering teams, this memory solution provides a seamless integration path with low latency and high retention, available through IC Manufacturer.

FM25L04B-G Technical Specifications

FM25L04B-G Key Features

• Ultra-high endurance: Supports up to 10¹⁴ write cycles, vastly exceeding typical EEPROMs, enhancing system longevity and reliability.
• Fast SPI interface: Operates at up to 40 MHz, enabling quick data transfers and reducing system latency for real-time applications.
• Low power consumption: Standby current as low as 4 ??A conserves energy in battery-powered or energy-sensitive devices.
• Non-volatile memory: Maintains data retention for over 10 years without power, ensuring persistent storage in critical systems.

FM25L04B-G Advantages vs Typical Alternatives

This serial ferroelectric RAM offers significant advantages over conventional EEPROM or Flash memory by combining ultra-high endurance with rapid write speeds and low power consumption. Its ability to sustain 10¹⁴ write cycles and maintain data for over a decade makes it highly reliable for industrial applications. The fast SPI interface and low voltage operation also contribute to better integration and energy efficiency compared to typical non-volatile memory solutions.

Typical Applications

• Industrial data logging systems that require frequent, fast writes and reliable long-term data retention in harsh environments.
• Smart meters and energy management devices where low power consumption and endurance are critical.
• Automotive control units needing robust non-volatile memory with fast access times and high durability.
• Medical instrumentation for secure and persistent storage of critical operational data with minimal power usage.

FM25L04B-G Brand Info

The FM25L04B-G is part of a family of ferroelectric RAM products known for their exceptional endurance and reliability. Manufactured by a leading provider in non-volatile memory solutions, this device is engineered to meet stringent industrial standards. It is widely recognized for offering a dependable alternative to EEPROM and Flash, ensuring data integrity and system efficiency across diverse industrial and commercial applications.

FAQ

What makes ferroelectric RAM in FM25L04B-G different from traditional EEPROM?

Ferroelectric RAM uses a ferroelectric layer to retain data, allowing it to achieve extremely high write endurance (up to 10¹⁴ cycles) compared to traditional EEPROMs, which typically endure around 10⁵ cycles. This results in longer device life and improved reliability for applications with frequent write operations.

Can the FM25L04B-G operate over a wide temperature range?

Yes, this memory device supports an operating temperature range from -40??C to +85??C, making it suitable for industrial environments and applications that require robust performance under varying thermal conditions.

How does the SPI interface benefit system integration?

The SPI interface