FM24C04B-G 4Kb Serial FRAM Memory IC – I2C Interface, SOP-8 Package

FM24C04B-G Overview

The FM24C04B-G is a 4Kb (512 x 8-bit) ferroelectric random access memory (FRAM) device designed for low-power, high-speed non-volatile data storage in industrial and commercial applications. Featuring I2C interface compatibility, it offers fast write cycles and unlimited endurance, making it ideal for systems requiring frequent data logging or parameter storage. Its low power consumption and high data retention make it a reliable solution for embedded systems, metering, and sensor applications. The compact 8-pin SOP package ensures easy integration into space-constrained designs. For detailed specifications and purchasing options, visit IC Manufacturer.

FM24C04B-G Technical Specifications

FM24C04B-G Key Features

• High Endurance FRAM Technology: Supports up to 101? read/write cycles, enabling virtually unlimited data logging without wear-out, essential for industrial sensor and control applications.
• Low Power Consumption: Operating current as low as 4 mA (active) and 1 ??A (standby) reduces overall system power, extending battery life in portable or remote equipment.
• Fast Write Speed: 10 ??s write cycle time ensures rapid data updates, improving system responsiveness and reducing latency in real-time measurement systems.
• I2C Interface Compatibility: Simplifies integration with most microcontrollers and processors, supporting standard 100 kHz and 400 kHz modes for versatile communication.

FM24C04B-G Advantages vs Typical Alternatives

This FRAM device outperforms typical EEPROM or Flash memory by offering significantly higher write endurance and faster write cycles, which reduces system downtime and maintenance. Its low power consumption and non-volatile nature enhance reliability in harsh industrial environments. Unlike EEPROM, it does not require block erase cycles, increasing write efficiency and system longevity.

Typical Applications

• Industrial data logging systems requiring frequent writes with long-term data retention and resistance to environmental stress.
• Metering equipment where low power operation and rapid data update improve accuracy and battery life.
• Embedded control systems demanding non-volatile memory with high endurance to support continuous parameter storage.
• Sensor modules integrating small footprint memory for calibration data and event logging in harsh conditions.

FM24C04B-G Brand Info

The FM24C04B-G is part of a family of ferroelectric RAM products designed for high-reliability non-volatile memory applications. Manufactured using advanced FRAM technology, it combines the speed of SRAM with the non-volatility of EEPROM. This product line targets industrial and commercial markets requiring durable, low-power memory solutions. Its robust design and standardized I2C interface facilitate seamless integration into a wide range of embedded systems.

FAQ

What is the main advantage of using FRAM technology in this memory device?

FRAM technology offers extremely high write endurance??up to 101? cycles??far exceeding that of EEPROM or Flash memory. This allows for frequent data updates without wear-out, making it ideal for applications with continuous logging or frequent parameter changes.

How does the FM24C04B-G handle power consumption in battery-operated systems?

The device features ultra-low standby current in the microampere range and low active current, minimizing power draw during both idle and write/read operations. This efficiency helps extend battery life in portable or remote monitoring equipment.

What communication protocols are supported by this memory device?

The FM24C04B-G supports the I2C interface, compatible with standard 100 k