FJV3113RMTF Toshiba IGBT Module, High Power Switching, 3-Phase Package

FJV3113RMTF Overview

The FJV3113RMTF is a high-performance NPN bipolar junction transistor designed for versatile switching and amplification applications in industrial and consumer electronics. Featuring a robust collector current capability and efficient gain characteristics, it supports reliable operation in low to medium power circuits. The compact surface-mount SOT-23 package facilitates space-saving PCB designs while ensuring thermal stability and durability. This transistor is ideal for engineers and sourcing specialists looking for a dependable, cost-effective component with consistent electrical performance. For detailed specifications and procurement, visit IC Manufacturer.

FJV3113RMTF Technical Specifications

FJV3113RMTF Key Features

• High Current Handling: Supports collector currents up to 150 mA, enabling effective switching and amplification in a range of medium-power circuits.
• Wide Voltage Range: With a maximum collector-emitter voltage of 50 V, it accommodates diverse industrial voltage environments safely.
• Compact SOT-23 Package: Facilitates high-density PCB layouts while maintaining thermal stability and robustness.
• Fast Switching Speed: Transition frequency around 100 MHz supports efficient high-frequency operation critical in communication and control systems.
• Reliable Gain Characteristics: Consistent DC current gain enhances signal amplification accuracy and circuit predictability.

Typical Applications

• General purpose switching and amplification in industrial automation control systems, where reliable transistor operation under varying load conditions is essential.
• Signal amplification in portable and battery-powered consumer electronics requiring low noise and stable gain.
• Interface circuits for microcontrollers and logic devices, leveraging high gain and fast switching for efficient signal processing.
• Driver stages in relay and solenoid control applications, benefiting from robust current handling and voltage tolerance.

FJV3113RMTF Advantages vs Typical Alternatives

The device offers a balanced combination of moderate voltage rating and high collector current capability, making it more versatile than many low-power transistors. Its fast switching speed and stable gain ensure accuracy in signal amplification and switching tasks. The surface-mount SOT-23 package provides improved thermal performance and PCB space efficiency compared to through-hole alternatives, enhancing integration in compact industrial designs.

FJV3113RMTF Brand Info

The FJV3113RMTF is manufactured by a reputable semiconductor supplier specializing in discrete transistors and analog components. This transistor is part of a broad family of general-purpose NPN BJTs commonly used in industrial, consumer, and automotive electronics. The brand is known for delivering reliable, cost-effective semiconductors that meet stringent quality and performance standards, ensuring dependable operation across various demanding environments.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 150 mA, which allows it to handle moderate load currents typical in switching and amplification circuits without compromising reliability.

Can this transistor operate at high frequencies?

Yes, the device features a transition frequency of approximately 100 MHz, making it suitable for high-frequency signal amplification and fast switching