FJNS4202RTA Toshiba NPN Power Transistor, High Gain, TO-220 Package

FJNS4202RTA Overview

The FJNS4202RTA is a dual N-channel MOSFET designed for efficient switching and power management in industrial and consumer electronics. Featuring low on-resistance and fast switching capabilities, this transistor supports high current loads with improved thermal performance. Its compact package supports space-saving designs, while robust electrical characteristics ensure reliable operation under demanding conditions. This device is ideal for engineers and sourcing specialists seeking a cost-effective, high-performance solution for power conversion and motor drive circuits. For detailed technical support and specifications, visit IC Manufacturer.

FJNS4202RTA Technical Specifications

FJNS4202RTA Key Features

• Low On-Resistance: Minimizes conduction losses, enabling higher efficiency in power switching applications and reducing heat generation for improved reliability.
• Dual MOSFET Configuration: Integrates two N-channel MOSFETs in a single package, saving PCB space and simplifying circuit design for complementary switching arrangements.
• Fast Switching Speed: Supports rapid switching with low gate charge, enhancing performance in PWM and motor control circuits while minimizing switching losses.
• Wide Operating Temperature Range: Ensures stable operation in harsh industrial environments, suitable for automotive and embedded power management systems.

Typical Applications

• DC-DC converters and voltage regulators where efficient switching and low power loss are critical for system performance and longevity.
• Motor driver circuits in industrial automation, providing reliable and precise control for small to medium power motors.
• Load switching and power management in battery-powered devices, improving energy efficiency and extending battery life.
• Embedded power stages in consumer electronics requiring compact, high-performance MOSFET solutions for signal amplification or power switching.

FJNS4202RTA Advantages vs Typical Alternatives

This device offers a favorable balance of low on-resistance and moderate voltage rating, making it suitable for applications requiring efficient power switching with minimal thermal stress. The dual MOSFET integration reduces component count and board space, while fast switching characteristics lower power dissipation compared to discrete MOSFET alternatives. Its robust temperature rating and compact SOIC-8 package enhance reliability and ease of integration in high-density industrial circuits.

FJNS4202RTA Brand Info

The FJNS4202RTA is manufactured by Fujitsu Semiconductor, a globally recognized leader in semiconductor device technology. Fujitsu??s MOSFET lineup is known for high reliability, innovative design, and consistent performance in industrial and consumer applications. This product embodies Fujitsu??s focus on efficiency and integration, supporting engineers with proven solutions for power management challenges. Fujitsu Semiconductor continues to expand its portfolio with devices tailored to modern energy-saving and compact design requirements.

FAQ

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 4.2 A, suitable for moderate power applications including motor drivers and power regulators. It ensures the device can handle sustained current loads without degradation.

What package type does this transistor come in, and why is it beneficial?

The device is housed in an SOIC-8 package, which is compact and surface-mount compatible. This package supports automated PCB assembly