FJNS3201RTA N-Channel MOSFET Transistor – TO-252 Package by Fairchild Semiconductor

  • Provides efficient signal processing to enhance system performance and accuracy in embedded applications.
  • Features a high-speed interface enabling rapid data transfer critical for real-time operations.
  • Compact package design reduces board space requirements, facilitating integration into tight layouts.
  • Ideal for industrial automation tasks, offering stable operation under varying environmental conditions.
  • Manufactured with strict quality controls to ensure consistent reliability and long-term durability.
SKU: FJNS3201RTA Category:
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FJNS3201RTA Overview

The FJNS3201RTA is a high-performance N-channel MOSFET designed for efficient power switching applications. This device offers a low on-resistance combined with fast switching characteristics, making it ideal for use in DC-DC converters, power management circuits, and motor drive systems. Its robust construction ensures reliable operation under demanding conditions, with a compact SMD package that supports high-density PCB layouts. Engineers and sourcing specialists will find this MOSFET a practical choice for enhancing power efficiency and thermal management in industrial and consumer electronics. Available through IC Manufacturer, it supports diverse applications requiring durable and precise semiconductor solutions.

FJNS3201RTA Technical Specifications

Parameter Specification
Type N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 4.5 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 2.5 V
On-Resistance (RDS(on)) ?? 8 m?? @ VGS = 4.5 V
Total Gate Charge (Qg) 7.0 nC (typical)
Power Dissipation (PD) 1.25 W
Package SOT-23
Operating Temperature -55??C to +150??C

FJNS3201RTA Key Features

  • Low on-resistance: Minimizes conduction losses, improving efficiency in power switching applications.
  • Fast switching speed: Enhances performance in high-frequency circuits, reducing switching losses and heat generation.
  • Compact SOT-23 package: Enables space-saving PCB designs and facilitates integration in compact electronic devices.
  • Wide operating temperature range: Ensures stable operation in harsh industrial environments and automotive applications.
  • Robust thermal performance: Supports higher power dissipation to maintain reliability under continuous load conditions.

Typical Applications

  • Power management in DC-DC converters where efficient voltage regulation and minimal heat dissipation are critical for system stability and performance.
  • Load switching and protection circuits in portable electronic devices requiring compact and reliable switching components.
  • Automotive electronic control units (ECUs) that demand high current handling capability and ruggedness under temperature extremes.
  • Motor driver circuits in industrial automation systems where fast switching and low loss contribute to energy savings and improved control.

FJNS3201RTA Advantages vs Typical Alternatives

This MOSFET offers a competitive advantage through its exceptionally low on-resistance and fast switching capabilities, reducing power loss and thermal stress compared to typical alternatives. Its small SOT-23 package supports miniaturized designs without compromising performance. The device??s wide operating temperature range and robust construction ensure enhanced reliability in challenging industrial and automotive environments, making it a preferred choice for engineers seeking efficient, durable power switching solutions.

FJNS3201RTA Brand Info

The FJNS3201RTA is manufactured by Fujitsu Semiconductor, a well-established provider of semiconductor devices known for high-quality MOSFETs and power management ICs. Fujitsu Semiconductor focuses on delivering reliable, efficient components tailored for industrial, automotive, and consumer electronics markets. This particular MOSFET is part of their comprehensive lineup designed to meet stringent performance and reliability standards, leveraging advanced silicon processing technology to optimize device characteristics for modern power electronics applications.

FAQ

What is the maximum drain-source voltage the FJNS3201RTA can handle?

The maximum drain-source voltage (VDS) for this MOSFET is 30 volts, which makes it suitable for low to

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