FJN3310RTA Overview
The FJN3310RTA is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and consumer electronics. Featuring low on-resistance and fast switching capabilities, this device supports enhanced system efficiency and thermal management in compact circuits. Its robust construction ensures reliable operation under demanding conditions, making it suitable for a wide range of power management applications. Engineers and sourcing specialists will find the FJN3310RTA an ideal choice for optimizing energy conversion and load driving tasks. For more detailed product information, visit IC Manufacturer.
FJN3310RTA Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 6.5 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| Drain-Source On-Resistance (RDS(on)) | 12 m?? @ VGS=4.5 V |
| Total Gate Charge (Qg) | 6.5 nC |
| Power Dissipation (PD) | 1.25 W |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Package Type | SOT-23 |
FJN3310RTA Key Features
- Low On-Resistance: Minimizes conduction losses, improving power efficiency and reducing heat generation in switching applications.
- High Current Capability: Supports continuous drain currents up to 6.5 A, enabling robust load driving in compact footprints.
- Fast Switching Speed: Low gate charge facilitates rapid switching, reducing switching losses in high-frequency circuits.
- Wide Operating Temperature Range: Ensures reliable performance in harsh environments, suitable for industrial-grade applications.
- Compact SOT-23 Package: Saves PCB space while maintaining thermal dissipation efficiency, aiding miniaturization in design.
Typical Applications
- DC-DC converters: Ideal for synchronous rectification and switching stages to improve conversion efficiency and thermal management.
- Load switching: Effective in controlling power to various loads with minimal voltage drop and energy loss.
- Battery protection circuits: Provides efficient switching with low leakage and fast response to protect battery packs.
- Power management modules: Enhances overall system reliability and efficiency in portable and industrial devices.
FJN3310RTA Advantages vs Typical Alternatives
This MOSFET offers a balanced combination of low on-resistance and high current capability, which reduces power dissipation compared to typical alternatives. Its fast switching characteristics lower switching losses, improving overall system efficiency. Additionally, the compact SOT-23 package allows for greater design flexibility while maintaining reliable thermal performance. These advantages make it an optimal choice for engineers seeking efficient, reliable power switching components in space-constrained applications.
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FJN3310RTA Brand Info
The FJN3310RTA is manufactured by Fujitsu Semiconductor, a globally recognized supplier of advanced semiconductor devices known for quality and reliability. Fujitsu’s portfolio includes power MOSFETs optimized for industrial and consumer electronics, supporting energy-efficient designs. The FJN3310RTA reflects their commitment to delivering robust, high-performance components engineered to meet rigorous industry standards and demanding application requirements.
FAQ
What is the maximum voltage rating of the FJN3310RTA?
The maximum drain-to-source voltage (VDS) of this MOSFET is 30 volts, making it suitable for low-voltage power management circuits and switching applications.
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