FERD30SM100DJFTR Overview
The FERD30SM100DJFTR is a high-performance silicon carbide (SiC) MOSFET designed for efficient power switching in industrial and automotive applications. Featuring a low on-resistance and fast switching capability, this device ensures minimal power loss and enhanced thermal management. It supports high voltage operation up to 1000 V, making it suitable for demanding environments requiring reliable and robust power conversion. With its optimized package design, it facilitates easy integration and improved heat dissipation. This advanced transistor enables engineers and sourcing specialists to achieve performant power management solutions with reduced system complexity and increased energy efficiency. For more information, visit IC Manufacturer.
FERD30SM100DJFTR Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-channel MOSFET (SiC) |
| Drain-Source Voltage (VDS) | 1000 V |
| Continuous Drain Current (ID) | 30 A |
| On-Resistance (RDS(on)) | 30 m?? (typical) |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typical) |
| Gate Charge (Qg) | Low capacitance for fast switching |
| Operating Temperature Range | -55??C to +175??C |
| Package Type | TO-247 3-pin |
| Maximum Pulsed Drain Current (IDM) | 120 A |
FERD30SM100DJFTR Key Features
- High-voltage blocking capability: Supports up to 1000 V, enabling use in high-power industrial converters and automotive inverters.
- Low on-resistance: Minimizes conduction losses, improving system efficiency and reducing thermal stress on components.
- Fast switching speed: Reduces switching losses and EMI, critical for high-frequency power applications.
- Wide operating temperature range: Ensures reliable performance in harsh environments, from cold starts to high-temperature operation.
- Robust TO-247 package: Facilitates effective heat dissipation and mechanical durability for industrial-grade applications.
Typical Applications
- Industrial motor drives requiring efficient and reliable high-voltage switching for variable speed control and energy savings.
- Automotive onboard chargers and DC-DC converters where compact size and thermal efficiency are critical.
- Renewable energy inverters such as solar and wind power systems demanding high voltage blocking and low losses.
- Power supplies for telecom and data centers that require high efficiency and minimal heat dissipation to maintain uptime.
FERD30SM100DJFTR Advantages vs Typical Alternatives
This SiC MOSFET offers superior performance compared to traditional silicon devices by providing lower on-resistance and faster switching speeds, which translate into higher efficiency and reduced heat generation. Its high voltage capability and robust package design enhance reliability in demanding industrial and automotive environments. These advantages help reduce system size and cooling requirements, making it a preferred choice over typical silicon MOSFETs in power electronics.
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FERD30SM100DJFTR Brand Info
The FERD30SM100DJFTR is manufactured by a leading semiconductor company specializing in silicon carbide power devices. The brand is recognized for its innovation in SiC technology, offering products that enable energy-efficient power conversion and improved system reliability. Known for stringent quality control and extensive application support, this manufacturer provides comprehensive technical documentation and global distribution channels to support engineers and sourcing professionals in industrial markets.
FAQ
What is the maximum voltage rating for the FERD30SM100DJFTR?
The device is rated for a maximum drain-source voltage of 1000 V, making it suitable for high-voltage power applications such as industrial motor drives and automotive inverters.
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How does the on-resistance value affect device performance?
Lower on-resistance reduces conduction losses during operation, which improves overall efficiency and minimizes heat generation. The typical 30 m?? on-resistance of this device supports efficient power switching.
