FERD30H100STS Overview
The FERD30H100STS is a high-performance power semiconductor device designed for robust industrial applications requiring efficient switching and high current handling. This component offers a maximum drain-to-source voltage of 100V with a continuous drain current rating of 30A, making it suitable for power management and control circuits. Engineered with low on-resistance and fast switching capabilities, it enhances system efficiency and thermal management. Ideal for engineers and sourcing specialists seeking a reliable MOSFET solution, this device supports a broad range of power electronics applications with proven durability and consistent performance. Available through IC Manufacturer.
FERD30H100STS Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 30 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| On-Resistance (RDS(on)) | 18 m?? @ VGS=10 V |
| Maximum Gate-to-Source Voltage (VGS) | ??20 V |
| Total Gate Charge (Qg) | 55 nC |
| Power Dissipation (PD) | 75 W |
| Operating Junction Temperature (Tj) | -55 to 175 ??C |
| Package Type | TO-220 |
FERD30H100STS Key Features
- Low On-Resistance: Minimizes conduction losses to improve overall circuit efficiency, reducing heat generation during operation.
- High Current Handling Capability: Supports continuous drain currents up to 30A, enabling use in demanding power control applications.
- Wide Operating Temperature Range: Reliable functionality between -55??C and 175??C ensures stable performance in harsh industrial environments.
- Fast Switching Speed: Optimized gate charge characteristics allow for efficient switching, critical in high-frequency power conversion systems.
Typical Applications
- Industrial motor control circuits that require efficient high-current switching capabilities and thermal reliability under continuous load conditions.
- Power supply units where low conduction losses contribute to improved energy savings and reduced thermal stress on components.
- DC-DC converters benefiting from fast switching speeds to enhance conversion efficiency and reduce electromagnetic interference.
- Battery management systems that demand robust MOSFETs capable of handling high current with stable threshold voltage over temperature.
FERD30H100STS Advantages vs Typical Alternatives
This MOSFET stands out due to its low on-resistance and high current rating, which deliver superior efficiency and lower power dissipation compared to typical alternatives. Its wide temperature range and robust gate voltage tolerance enhance reliability, making it a preferred choice for industrial power electronics. These advantages ensure reduced thermal management requirements and extended device lifespan in demanding applications.
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FERD30H100STS Brand Info
The FERD30H100STS is manufactured by an industry-recognized semiconductor supplier specializing in power MOSFETs tailored for industrial and automotive markets. Known for delivering devices with reliable performance and consistent quality, the brand supports engineers with comprehensive datasheets and application support. The product aligns with the brand??s commitment to offering high-efficiency, high-current power transistors suited for modern power management challenges.
FAQ
What is the maximum voltage rating of this MOSFET?
The device has a maximum drain-to-source voltage rating of 100 volts, which defines the highest voltage it can safely block when in the off state without breakdown.
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How much current can this MOSFET handle continuously?
It supports a continuous drain current of up to 30 amperes, making it suitable for applications requiring sustained high current flow under normal operating conditions.
What package type does this component use?
This MOSFET is housed in a TO-220 package, which facilitates easy mounting and efficient heat dissipation in power electronic assemblies.





