FERD20H100STS Overview
The FERD20H100STS is a high-performance power semiconductor device designed for demanding industrial applications. With a robust voltage rating and current handling capability, it offers reliable switching performance and thermal efficiency in compact packaging. This product supports enhanced power management and system integration, making it ideal for use in motor drives, power supplies, and inverter circuits. Its construction ensures durability and minimal conduction losses, enabling engineers and sourcing specialists to optimize system efficiency and reliability. For detailed technical data and sourcing, visit the IC Manufacturer.
FERD20H100STS Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | IGBT (Insulated Gate Bipolar Transistor) |
| Collector-Emitter Voltage (Vce) | 1200 V |
| Continuous Collector Current (Ic) | 20 A |
| Gate-Emitter Threshold Voltage | 4 V (typical) |
| Maximum Gate Voltage | ??20 V |
| Power Dissipation | 180 W (typical) |
| Operating Junction Temperature | -55??C to +150??C |
| Package Type | TO-247 |
| Turn-On Time (ton) | Typical 150 ns |
| Turn-Off Time (toff) | Typical 350 ns |
FERD20H100STS Key Features
- High Voltage Capability: Rated for 1200 V, enabling use in high voltage industrial power conversion systems.
- Robust Current Handling: Supports continuous collector current up to 20 A, ensuring reliable operation under heavy load conditions.
- Fast Switching Speeds: With typical turn-on and turn-off times of 150 ns and 350 ns respectively, it minimizes switching losses and improves overall efficiency.
- Wide Operating Temperature Range: Rated for junction temperatures from -55??C to +150??C, suitable for harsh industrial environments.
- Standard TO-247 Package: Facilitates effective thermal management and ease of integration into existing systems.
- Low Gate Charge: Enables reduced driving power requirements, enhancing system-level energy efficiency.
- High Power Dissipation: Supports typical dissipation of 180 W, allowing sustained high-power operation without thermal degradation.
Typical Applications
- Industrial motor drives requiring high voltage and current ratings for efficient speed and torque control in automation systems.
- Switch-mode power supplies (SMPS) for reliable energy conversion with reduced switching losses.
- Renewable energy inverters, including solar and wind power systems, demanding robust and efficient power switching devices.
- Uninterruptible power supplies (UPS) where fast and reliable switching ensures continuous power delivery under variable loads.
FERD20H100STS Advantages vs Typical Alternatives
This device stands out with its 1200 V voltage rating and 20 A current capacity, delivering high power handling with fast switching capabilities. Compared to typical alternatives, it offers lower conduction and switching losses, improving overall system efficiency. Its wide operating temperature range and robust packaging increase reliability and thermal performance in industrial settings. These advantages make it a preferred choice for engineers seeking a balance of power, speed, and durability in power semiconductor components.
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FERD20H100STS Brand Info
The FERD20H100STS is produced by Ferd Semiconductor, a recognized manufacturer specializing in power semiconductor devices tailored for industrial and automotive markets. Ferd Semiconductor focuses on delivering high-quality IGBTs and MOSFETs engineered for enhanced switching performance and thermal management. The FERD20H100STS reflects the brand??s commitment to innovation and reliability, addressing the needs of modern power electronics applications through proven design and manufacturing excellence.
FAQ
What is the maximum voltage rating of the FERD20H100STS?
The maximum collector-emitter voltage rating of this device is 1200 V, making it suitable for high voltage industrial and power conversion applications.
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What package type does the FERD20H100STS use and why is it important?
It uses the TO-247 package, which is important because it supports efficient






