DTC144ECAHE3-TP Toshiba IGBT Transistor Module ?C High Power, TO-3P Package

DTC144ECAHE3-TP Overview

The DTC144ECAHE3-TP is a high-performance semiconductor device designed for advanced industrial and automotive applications. Featuring a robust configuration and optimized electrical characteristics, it delivers reliable switching performance with enhanced thermal stability. This component supports high-speed operation and precise control, making it suitable for power management, signal processing, and system-level integration. Its compact footprint and lead-free packaging enable efficient board design and compliance with industry standards. For detailed specifications and sourcing, visit IC Manufacturer.

DTC144ECAHE3-TP Technical Specifications

DTC144ECAHE3-TP Key Features

• Dual transistor integration: Combines two NPN transistors in a single compact package, enabling space-saving circuit designs without sacrificing performance.
• High transition frequency: Operates up to 100 MHz, ensuring suitability for high-speed switching and amplification tasks in communication and control circuits.
• Wide operating temperature range: Supports reliable functionality from -55??C to +150??C, facilitating deployment in harsh industrial and automotive environments.
• Low power dissipation: Rated at 400 mW, enabling efficient thermal management and reducing the need for additional cooling components.

Typical Applications

• Signal amplification and switching in compact industrial control modules, where board space and thermal efficiency are critical.
• Automotive electronic systems requiring reliable low-power transistor pairs for sensor interfacing and signal conditioning.
• High-frequency analog circuits such as RF amplifiers and oscillators benefiting from the device??s high transition frequency.
• Consumer electronics designs needing small-footprint, high-performance transistor solutions for power management and signal processing.

DTC144ECAHE3-TP Advantages vs Typical Alternatives

This device offers superior integration by combining two NPN transistors in a single compact package, reducing PCB footprint compared to discrete alternatives. Its high transition frequency and low power dissipation enhance switching speed and thermal efficiency, respectively. The wide temperature range ensures reliability under demanding conditions, making it a robust choice for industrial and automotive applications where precision and durability are paramount.

DTC144ECAHE3-TP Brand Info

The DTC144ECAHE3-TP is manufactured by Diodes Incorporated, a global leader in high-quality discrete and analog semiconductor products. Diodes Incorporated is renowned for delivering innovative solutions that meet stringent industry standards, including automotive AEC-Q101 compliance. This transistor pair reflects the brand??s commitment to reliability, efficiency, and miniaturization, supporting engineers with components that simplify design and enhance system performance.

FAQ

What type of transistors are integrated within the DTC144ECAHE3-TP?

The device integrates two NPN bipolar junction transistors within a single package. This configuration allows for compact dual transistor applications without requiring multiple discrete components.

Can this device operate in automotive temperature environments?

Yes, it supports an operating temperature range from -55??C to +150??C, making it suitable for automotive and harsh industrial environments where temperature extremes are common.

What is the maximum collector current supported by this transistor pair?

The maximum continuous collector current for each transistor in the device is 150 mA, allowing it