DTC143ECAHE3-TP Infineon IGBT Transistor Module – High Efficiency Power Package

  • Provides efficient power regulation to maintain stable voltage levels in electronic circuits.
  • Features a specified current rating that ensures reliable performance under typical load conditions.
  • Compact package design allows for board-space savings in dense electronic assemblies.
  • Ideal for use in embedded systems where consistent power delivery enhances overall device stability.
  • Manufactured with quality control measures to ensure long-term operational reliability and durability.
SKU: DTC143ECAHE3-TP Category:
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DTC143ECAHE3-TP Overview

The DTC143ECAHE3-TP is a high-performance NPN transistor designed for general-purpose switching and amplification in industrial electronics. Offering a balanced combination of voltage and current ratings, it supports efficient operation in medium-power circuits. With a TO-252 package, this device enables compact PCB layouts and reliable thermal management. Its robust electrical characteristics make it suitable for diverse industrial control, signal processing, and drive applications. Sourcing specialists and design engineers benefit from its consistent performance and industry-standard footprint, ensuring straightforward integration into existing systems. For more detailed technical resources, visit the IC Manufacturer.

DTC143ECAHE3-TP Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 0.8 A
Power Dissipation (Ptot) 0.8 W
DC Current Gain (hFE) 100 to 300 ??
Transition Frequency (fT) 100 MHz
Collector-Base Voltage (VCBO) 80 V
Base-Emitter Voltage (VBE) 5 V
Operating Junction Temperature (Tj) -55 to +150 ??C
Package Type TO-252 (DPAK) ??

DTC143ECAHE3-TP Key Features

  • High collector-emitter voltage rating: Supports up to 60 V, enabling use in moderate voltage switching applications with enhanced reliability.
  • Robust collector current capacity: Handles continuous currents up to 0.8 A, making it suitable for driving medium-power loads efficiently.
  • Wide DC current gain range: Offers gain between 100 and 300, providing flexibility for amplification and switching circuits.
  • Fast transition frequency: Operating at 100 MHz ensures suitability for high-frequency switching and signal processing tasks.
  • Compact TO-252 package: Facilitates efficient heat dissipation and space-saving PCB design, critical for dense industrial environments.
  • Wide operating temperature range: From -55??C to +150??C, supports reliable operation under harsh environmental conditions.

Typical Applications

  • Industrial motor control circuits requiring reliable medium-power switching and amplification for efficient drive performance.
  • Signal amplification in sensor interface modules where stable gain and frequency response are essential.
  • Power management systems in automation equipment demanding compact, thermally efficient transistor solutions.
  • Switching elements in relay driver circuits used in industrial control panels and instrumentation.

DTC143ECAHE3-TP Advantages vs Typical Alternatives

This transistor stands out for its balanced voltage and current ratings combined with a high transition frequency, delivering improved switching speed and gain accuracy compared to common alternatives. Its robust thermal handling and TO-252 packaging offer superior power dissipation, ensuring enhanced reliability in demanding industrial environments. These advantages translate into lower system losses and increased component lifespan, making it a preferred choice for engineers seeking efficient, compact transistor solutions.

DTC143ECAHE3-TP Brand Info

The DTC143ECAHE3-TP is manufactured by Diodes Incorporated, a global leader in discrete, logic, and analog semiconductor solutions. Known for delivering high-quality, reliable components optimized for industrial and consumer applications, Diodes Inc. provides this transistor as part of their comprehensive portfolio

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