DTC123JUA-TP Toshiba NPN Transistor – Semiconductor Device, TO-92 Package

  • This device performs high-precision timing control, enabling accurate synchronization in electronic systems.
  • Operating frequency supports stable performance, ensuring consistent signal integrity in demanding environments.
  • The compact CBZ package reduces board space, facilitating integration into space-constrained designs.
  • Ideal for communication equipment, it enhances data transfer reliability and system responsiveness.
  • Manufactured under strict quality controls, the component offers dependable long-term operation.
SKU: DTC123JUA-TP Category:
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DTC123JUA-TP Overview

The DTC123JUA-TP is a versatile dual NPN transistor device designed for efficient switching and amplification in industrial electronics applications. Manufactured with high-quality semiconductor processes, it provides reliable performance at low power levels, making it ideal for precise control circuits. Its compact SOT-363 package ensures easy PCB integration while maintaining thermal stability. With moderate gain and voltage ratings, this component supports a wide range of signal processing and driver functions, catering to the needs of engineers and sourcing specialists seeking dependable discrete transistor solutions. For detailed product sourcing and technical support, visit IC Manufacturer.

DTC123JUA-TP Technical Specifications

Parameter Specification
Transistor Type Dual NPN
Package SOT-363 (6-pin)
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 100 mA (max)
DC Current Gain (hFE) 100 to 300 (at IC = 2 mA)
Transition Frequency (fT) 100 MHz (typical)
Power Dissipation (Ptot) 300 mW (max)
Operating Temperature Range -55??C to +150??C

DTC123JUA-TP Key Features

  • Dual NPN transistor configuration: Enables compact and efficient circuit design by integrating two transistors in a single package.
  • High voltage tolerance: Supports up to 40 V collector-base voltage, ensuring reliable operation in moderately high-voltage environments.
  • Wide current gain range: Provides flexible gain characteristics suitable for low-noise amplification and switching applications.
  • Surface-mount SOT-363 package: Facilitates automated PCB assembly and saves board space for dense industrial electronics layouts.

Typical Applications

  • Signal amplification in industrial control circuits where dual transistor functionality reduces component count and enhances design efficiency.
  • Switching applications in low-power drivers for sensors and actuators requiring precise and reliable transistor switching behavior.
  • General-purpose amplification in communication devices, supporting moderate frequency and gain requirements.
  • Interface circuits in automation equipment where compact size and thermal stability are critical for sustained operation.

DTC123JUA-TP Advantages vs Typical Alternatives

This dual transistor device offers superior integration compared to discrete single-transistor components, reducing PCB footprint and assembly complexity. Its balanced combination of voltage tolerance and current gain makes it well-suited for sensitive industrial control tasks. The low power dissipation and robust operating temperature range enhance reliability under demanding conditions, providing a dependable alternative to standard transistor options with lower gain or less compact packaging.

DTC123JUA-TP Brand Info

The DTC123JUA-TP is manufactured by Diodes Incorporated, a leading global supplier of high-quality discrete semiconductor products. Diodes Incorporated specializes in innovative transistor solutions that emphasize efficiency, reliability, and miniaturization. This product line reflects their commitment to providing engineers with components that support advanced industrial electronics designs through proven performance and broad availability.

FAQ

What is the maximum collector current rating of the device?

The maximum collector current for the device is 100 mA, which makes it suitable for low-power switching and amplification tasks in industrial circuits without risk of damage under typical operating conditions.

Can this transistor be used in high-frequency applications?

Yes, it features a transition frequency (fT) of approximately 100 MHz, making it capable

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