DTC123JCAHE3-TP Toshiba NPN Transistor, High-Speed Switching, TO-252 Package

DTC123JCAHE3-TP Overview

The DTC123JCAHE3-TP is a high-performance transistor designed for precise switching and amplification in industrial and consumer electronics applications. This device features a robust construction that supports reliable operation in demanding environments, ensuring consistent performance and long-term durability. With its optimized electrical characteristics, it enables efficient power management and signal control, making it suitable for a variety of circuit designs. Engineers and sourcing specialists can rely on this component for enhanced system stability and integration ease. For detailed product sourcing and technical support, visit IC Manufacturer.

DTC123JCAHE3-TP Technical Specifications

DTC123JCAHE3-TP Key Features

• High DC Current Gain: Provides strong amplification capability, ensuring minimal signal loss and efficient switching performance.
• Compact SOT-23 Package: Enables high-density PCB layouts and ease of assembly in space-constrained designs.
• Wide Operating Temperature Range: Supports reliable operation under harsh thermal conditions, making it suitable for industrial environments.
• Fast Transition Frequency: Ensures rapid switching speeds for high-frequency applications, improving overall circuit responsiveness.

Typical Applications

• General-purpose amplification and switching in low-power electronic circuits, including signal processing and control modules requiring precise transistor behavior.
• Driver stages for relays, LEDs, and small motors where efficient current amplification is essential.
• Interface circuits in communication equipment, supporting signal conditioning and level shifting.
• Battery-powered devices that benefit from low power dissipation and compact component size to extend operational life.

DTC123JCAHE3-TP Advantages vs Typical Alternatives

The transistor offers superior integration in compact formats with a SOT-23 package, enhancing PCB space efficiency compared to larger packages. Its high DC current gain and fast transition frequency provide better performance in amplification and switching tasks, while its wide operating temperature range ensures reliable operation in various industrial conditions. These attributes collectively improve sensitivity, power efficiency, and long-term reliability over many typical transistor alternatives.

DTC123JCAHE3-TP Brand Info

The DTC123JCAHE3-TP is manufactured by Diodes Incorporated, a global supplier specializing in discrete semiconductors and logic devices. Diodes Incorporated is recognized for delivering high-quality, reliable components designed to meet stringent industrial and consumer electronics standards. This transistor embodies the brand??s commitment to robust performance, compact package design, and application versatility, making it a trusted choice among engineers and OEMs worldwide.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current (Ic) for this transistor is 0.8 A, which allows it to handle moderate current loads suitable for general-purpose switching and amplification tasks without compromising reliability.

Can the device operate in high-temperature environments?

Yes, the device supports an operating temperature range from -55??C up to +150??C, making it well-suited for applications subject to harsh or variable temperature conditions commonly found in industrial settings.

What package type does the transistor use and why is it important?

This transistor is housed in a SOT-23 package, a small and widely used surface-mount format that facilitates compact PCB layouts and automated assembly, which is crucial for space-saving designs and cost-effective manufacturing.

Is the transistor suitable for high-frequency applications?

With a transition frequency (fT) of 100 MHz, the device performs well in high-frequency circuits, providing fast switching capabilities that enhance the response times in RF