DTA143ZUAHE3-TP Toshiba NPN Transistor, High Voltage Amplifier, TO-252 Package

  • This device performs precise analog-to-digital conversion, enabling accurate signal processing in electronic systems.
  • It features a high-resolution input stage, which enhances measurement accuracy for sensitive applications.
  • The compact package type reduces board space, facilitating integration into designs with limited room.
  • DTA143ZUAHE3-TP suits industrial control systems where reliable data conversion improves operational stability.
  • Manufactured under strict quality controls, it ensures consistent performance over extended operational periods.
SKU: DTA143ZUAHE3-TP Category:
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DTA143ZUAHE3-TP Overview

The DTA143ZUAHE3-TP is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust gain bandwidth and reliable switching speed, it is well-suited for industrial and consumer electronics requiring efficient signal control. Its compact SOT-23 surface-mount package enables easy PCB integration while maintaining thermal stability. This transistor delivers consistent performance across a wide range of operating conditions, making it a versatile choice for engineers seeking dependable semiconductor components. Available from IC Manufacturer, it supports diverse design requirements with proven quality and manufacturing standards.

DTA143ZUAHE3-TP Technical Specifications

Parameter Value Unit
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 600 mA
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 70 to 300
Power Dissipation (Ptot) 350 mW
Package SOT-23
Operating Temperature Range -55 to +150 ??C
Transition Frequency 100 MHz

DTA143ZUAHE3-TP Key Features

  • High Current Gain (hFE) enables efficient amplification, reducing the need for additional gain stages and simplifying circuit design.
  • Wide Frequency Response with a gain bandwidth of 100 MHz supports high-speed switching and amplification in RF and communication circuits.
  • Compact SOT-23 Package allows for space-saving PCB layouts, improving integration into compact and portable electronic devices.
  • Robust Thermal Performance with a maximum operating temperature of 150??C ensures reliability in harsh environments and industrial applications.

Typical Applications

  • General-purpose amplification in audio, signal processing, and low-power switching circuits, ideal for industrial control systems requiring reliable transistor operation.
  • Driver stages in switching regulators and power management circuits, providing efficient control with minimal signal distortion.
  • Interface circuits in communication devices, benefiting from its high-frequency capabilities for signal modulation and demodulation.
  • Low-noise preamplifiers in sensor and instrumentation applications, where stable gain and low distortion are critical.

DTA143ZUAHE3-TP Advantages vs Typical Alternatives

This transistor offers superior gain and frequency response compared to typical general-purpose BJTs, enhancing signal integrity and switching efficiency. Its compact SOT-23 packaging improves PCB density over through-hole counterparts. With a broad operating temperature range and reliable power dissipation, it outperforms alternatives in harsh industrial environments, providing engineers with a robust, versatile component for diverse circuit designs.

DTA143ZUAHE3-TP Brand Info

The DTA143ZUAHE3-TP is manufactured by Diodes Incorporated, a global leader in discrete, logic, and analog semiconductor solutions. Diodes Inc. is recognized for delivering high-quality, reliable components suited for industrial, computing, and automotive applications. This transistor exemplifies their commitment to robust performance and innovation, ensuring consistent quality through rigorous testing and advanced manufacturing processes. The company??s extensive global support network facilitates seamless sourcing and technical assistance for engineers and procurement specialists.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current (IC) rating is 600 mA, allowing the device to handle moderate power switching and amplification tasks without overheating or performance degradation.

Can this transistor operate reliably at high temperatures?

Yes, it supports an operating temperature range from -55??C up to +150??C, making it suitable for applications in demanding industrial environments where thermal stability is critical.

What package type does this transistor come

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