DTA143ZE-TP Toshiba NPN Transistor High-Speed Switching TO-220 Package

DTA143ZE-TP Overview

The DTA143ZE-TP is a high-performance NPN silicon transistor designed for low noise amplification in high-frequency applications. Featuring a maximum collector current of 100mA and a low noise figure, this device is optimized for RF and intermediate frequency stages where signal integrity is critical. Its compact SOT-23 package ensures easy integration into densely populated circuit boards, making it ideal for communication systems and industrial electronics. Manufactured with stringent quality controls, this transistor delivers reliable operation across a wide temperature range. For sourcing and technical details, visit IC Manufacturer.

DTA143ZE-TP Technical Specifications

DTA143ZE-TP Key Features

• Low Noise Performance: Minimizes signal distortion in RF applications, enhancing overall system sensitivity.
• High Transition Frequency: Supports operation up to 100MHz, suitable for intermediate frequency amplification stages.
• Compact SOT-23 Package: Enables efficient PCB layout and space-saving designs.
• Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments.

Typical Applications

• RF Amplifiers in communication equipment where low noise and high-frequency switching are essential for signal clarity and strength.
• Intermediate frequency (IF) stages in radio receivers requiring stable gain and minimal noise figure.
• Signal amplification in industrial sensors and instrumentation circuits demanding precision and reliability.
• Low power switching and general-purpose amplification in portable electronic devices with space constraints.

DTA143ZE-TP Advantages vs Typical Alternatives

This transistor provides superior noise performance compared to many generic NPN devices, making it ideal for sensitive RF amplification. Its high transition frequency allows faster switching and better gain at high frequencies, while the SOT-23 package supports compact, space-saving designs. Reliability across a broad temperature range ensures consistent operation where alternatives may fail, making it a dependable choice for demanding industrial and communication applications.

DTA143ZE-TP Brand Info

The DTA143ZE-TP is produced by Diodes Incorporated, a global supplier of high-quality semiconductor devices. Known for their robust portfolio of discrete, logic, and analog components, Diodes Incorporated emphasizes reliability and performance in industrial and consumer electronics markets. This transistor is part of their extensive lineup targeting RF and analog signal amplification solutions, combining proven manufacturing processes with stringent quality standards to meet demanding application requirements.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 100mA, which allows it to handle moderate power amplification tasks within RF and general-purpose circuits.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency of 100MHz, the device is well-suited for high-frequency amplification stages such as RF and intermediate frequency circuits.

What package type is used for this transistor and why is it important?

This transistor uses a SOT-23 package, which is a compact, surface-mount package ideal for applications where PCB space is limited and automated assembly is required.

What temperature range can