The DTA123JCAHE3-TP is a high-performance dual NPN transistor designed for robust switching and amplification applications in industrial electronics. Featuring a compact SOT-323 package, this device offers reliable operation with a maximum collector current of 150mA and a collector-emitter voltage rating of 30V. Its low saturation voltage and fast switching speeds make it suitable for signal processing, driver stages, and general-purpose amplification. Designed to meet industry standards, the transistor ensures efficient integration into compact circuit boards, optimizing space without compromising performance. For detailed technical data and sourcing, visit the IC Manufacturer.
DTA123JCAHE3-TP Technical Specifications
Parameter
Specification
Transistor Type
Dual NPN
Collector-Emitter Voltage (VCEO)
30 V
Collector Current (IC)
150 mA
Power Dissipation (Ptot)
350 mW
Package Type
SOT-323 (SC-70)
DC Current Gain (hFE)
100 to 300 (at IC=2mA)
Transition Frequency (fT)
100 MHz (typical)
Operating Temperature Range
-55??C to +150??C
Collector-Base Voltage (VCBO)
40 V
DTA123JCAHE3-TP Key Features
Dual NPN configuration: Enables compact circuit design by integrating two transistors in a single package, reducing board space and component count.
High current capability: Supports collector currents up to 150 mA, suitable for moderate power switching and amplification tasks.
Low saturation voltage: Ensures efficient switching with minimal power loss, improving overall system efficiency.
Wide operating temperature range: Reliable operation in industrial environments from -55??C to +150??C enhances durability under harsh conditions.
High transition frequency: Offers fast switching speeds around 100 MHz, making it ideal for high-frequency signal amplification.
Compact SOT-323 package: Facilitates integration into space-constrained applications while maintaining thermal performance.
Robust voltage ratings: Collector-emitter and collector-base voltage ratings of 30 V and 40 V respectively support a variety of low-voltage circuits.
Typical Applications
Signal Amplification: Used in preamplifier stages for audio and sensor signal conditioning where dual transistor configurations provide gain and switching.
Switching Circuits: Suitable for driving LEDs, relays, and small motors in control systems requiring moderate current handling.
Voltage Level Shifting: Employed in interfacing circuits to convert logic levels between different voltage domains efficiently.
General-Purpose Amplification: Applied in analog circuits, including oscillators and waveform generators, benefiting from its frequency and gain characteristics.
DTA123JCAHE3-TP Advantages vs Typical Alternatives
This transistor offers a compelling balance of current capacity, voltage ratings, and switching speed in a compact SOT-323 package, outperforming many discrete single-transistor alternatives. Its dual transistor configuration minimizes PCB footprint, while low saturation voltage reduces power loss, enhancing energy efficiency. The wide temperature range and robust electrical parameters ensure reliability in industrial environments, making it a superior choice for engineers seeking dependable, space-saving transistor solutions.
The DTA123JCAHE3-TP is manufactured by Diodes Incorporated, a leader in high-quality discrete, logic, and analog semiconductor products. Diodes Inc. specializes in providing industry-standard transistor solutions for industrial and consumer electronics. This dual NPN transistor reflects the company??s commitment to delivering reliable, high-performance components optimized for compact design and broad application versatility. Trusted worldwide, Diodes Inc. supports engineers with comprehensive datasheets, quality assurance, and global distribution networks.
