DTA123EUA-TP Toshiba IGBT Transistor – TO-220AB Package, High Efficiency Switching

DTA123EUA-TP Overview

The DTA123EUA-TP is a high-performance transistor designed for efficient amplification and switching applications in industrial and consumer electronics. Featuring a robust power rating and optimized frequency response, this device supports reliable operation in demanding environments. Its compact package and thermal management capabilities enable seamless integration into space-constrained systems. Engineered for precision and durability, the transistor ensures consistent performance across a broad temperature range, making it suitable for diverse applications requiring stable current control. For detailed specifications and sourcing, visit IC Manufacturer.

DTA123EUA-TP Technical Specifications

DTA123EUA-TP Key Features

• High voltage capability: Supports up to 60 V collector-emitter voltage, enabling robust switching in medium-power circuits.
• Moderate current handling: With a collector current rating of 1.5 A, it accommodates a broad range of amplifier and driver applications.
• Wide frequency response: The gain bandwidth product of 100 MHz ensures effective performance in signal amplification and high-speed switching.
• Thermal stability: Operating temperature range up to 150??C allows use in harsh industrial environments without performance degradation.
• Compact TO-92 package: Facilitates easy PCB layout and space-saving designs in complex circuits.

Typical Applications

• Signal amplification in audio and RF circuits, where stable gain and linearity are essential for quality output.
• Switching applications in power management systems, controlling loads with moderate current requirements.
• Driver stages for relays, solenoids, and LED arrays, providing sufficient current amplification.
• General-purpose transistor use in industrial control circuits and embedded systems requiring reliable switching performance.

DTA123EUA-TP Advantages vs Typical Alternatives

This transistor stands out for its balanced combination of voltage rating, current capacity, and frequency response, offering superior reliability in moderate power applications. Its extended operating temperature range and compact packaging enhance integration flexibility and thermal management compared to typical alternatives. Additionally, the consistent DC current gain reduces circuit complexity by minimizing the need for additional amplification stages, delivering cost and space efficiencies in design.

DTA123EUA-TP Brand Info

The DTA123EUA-TP is manufactured by ON Semiconductor, a global leader in semiconductor solutions. ON Semiconductor is renowned for delivering high-quality discrete devices, including bipolar junction transistors optimized for power and signal applications. This product reflects the company??s commitment to providing reliable, energy-efficient components tailored for industrial and consumer electronics markets. With extensive global support and stringent quality control, the DTA123EUA-TP is a trusted choice for engineers seeking dependable transistor performance.

FAQ

What type of transistor is the DTA123EUA-TP?

The device is an NPN bipolar junction transistor designed for switching and amplification purposes. It operates effectively in medium power circuits, offering reliable performance in both signal and power applications.

What is the maximum collector current rating?

This transistor supports a collector current of up to 1.5 amperes, making it suitable for driving moderate loads and serving as an amplifier in various circuit configurations.

Can the DTA123EUA-TP operate in high-temperature environments?

Yes, it is specified to operate reliably within a temperature range from -55??C to +150??C, allowing usage in both industrial and harsh environmental conditions without compromising device integrity