DTA123ECA-TP Diode Transient Voltage Suppressor – TO-220 Package | Diodes Inc.

  • Provides precise temperature control to maintain system stability and improve performance accuracy.
  • Features a specified operating voltage ensuring compatibility with a wide range of industrial equipment.
  • Compact LFCSP package minimizes board space usage, enabling denser circuit layouts and easier integration.
  • Ideal for HVAC systems where accurate thermal regulation enhances energy efficiency and user comfort.
  • Designed for consistent operation under varying environmental conditions, supporting long-term reliability.
SKU: DTA123ECA-TP Category:
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DTA123ECA-TP Overview

The DTA123ECA-TP is a high-performance dual NPN transistor designed for switching and amplification applications in industrial and consumer electronics. This device offers reliable electrical characteristics with a focus on low noise and high gain, making it ideal for precision signal processing. Packaged in a compact SOT-23 form factor, it facilitates easy integration on densely populated printed circuit boards. The robust thermal and electrical parameters ensure consistent performance under varying operating conditions. Available through IC Manufacturer, this transistor meets stringent quality standards required by engineers and sourcing specialists worldwide.

DTA123ECA-TP Technical Specifications

Parameter Specification
Transistor Type Dual NPN
Package SOT-23
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 150 mA
DC Current Gain (hFE) 100 – 300
Transition Frequency (fT) 100 MHz
Power Dissipation (Ptot) 350 mW
Operating Temperature Range -55??C to +150??C
Noise Figure Low noise operation

DTA123ECA-TP Key Features

  • Dual NPN transistors: Enables compact circuit designs by integrating two transistors in a single package, reducing board space and assembly complexity.
  • High DC current gain (hFE): Provides improved amplification performance, critical for signal integrity in low-level analog circuits.
  • Wide frequency response up to 100 MHz: Suitable for high-speed switching and RF applications, enhancing versatility across industrial and communication systems.
  • Robust power dissipation capability: Supports up to 350 mW, ensuring reliable operation under thermal stress and extending device lifespan.
  • Compact SOT-23 package: Facilitates automated surface-mount assembly and optimizes PCB layout in space-constrained designs.
  • Low noise characteristics: Ideal for precision analog circuits requiring minimal signal distortion and enhanced signal-to-noise ratio.

Typical Applications

  • Signal amplification in industrial control systems: The device??s high gain and low noise make it suitable for amplifying sensor outputs and control signals.
  • Switching elements in power management circuits: Efficiently controls low to medium current loads with fast switching speeds.
  • RF and communication modules: Its frequency response supports use in driver stages for wireless communication equipment.
  • Consumer electronics: Applicable in audio preamplifiers and small-signal amplification within portable devices.

DTA123ECA-TP Advantages vs Typical Alternatives

This transistor stands out with its combination of dual NPN configuration and high current gain, enabling compact and efficient circuit designs. Its robust voltage and power ratings ensure reliable performance in demanding environments, while low noise characteristics make it superior in precision applications compared to standard single-transistor alternatives. The SOT-23 package enhances manufacturability and integration, offering a balanced solution for engineers prioritizing both performance and space efficiency.

DTA123ECA-TP Brand Info

The DTA123ECA-TP is manufactured by Diodes Incorporated, a global leader in high-quality semiconductor components. Diodes Incorporated specializes in discrete, logic, and analog semiconductor products that serve a broad array of industrial, computing, consumer, and communications applications. This device is part of their extensive portfolio of bipolar transistors designed for reliable switching and amplification, backed by rigorous quality assurance and broad distribution support worldwide.

FAQ

What is the maximum collector current rating for this device?

The maximum collector current for this transistor is 150 mA, making it suitable for low

Application

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